发明授权
US07811943B2 Process for producing silicon carbide crystals having increased minority carrier lifetimes
有权
具有增加的少数载流子寿命的碳化硅晶体的生产方法
- 专利标题： Process for producing silicon carbide crystals having increased minority carrier lifetimes
- 专利标题（中）： 具有增加的少数载流子寿命的碳化硅晶体的生产方法
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申请号： US11052679申请日： 2005-02-07
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公开(公告)号： US07811943B2公开(公告)日： 2010-10-12
- 发明人: Calvin H. Carter, Jr. , Jason R. Jenny , David P. Malta , Hudson M. Hobgood , Valeri F. Tsvetkov , Mrinal K. Das
- 申请人： Calvin H. Carter, Jr. , Jason R. Jenny , David P. Malta , Hudson M. Hobgood , Valeri F. Tsvetkov , Mrinal K. Das
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 代理机构： Moore & Van Allen PLLC
- 代理商 Steven B. Phillips
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.
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