发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US12083057申请日： 2006-09-21
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公开(公告)号： US07812412B2公开(公告)日： 2010-10-12
- 发明人: Kouji Watanabe , Nobuyuki Ikarashi , Kouji Masuzaki
- 申请人： Kouji Watanabe , Nobuyuki Ikarashi , Kouji Masuzaki
- 申请人地址： JP Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JP2005-291625 20051004
- 国际申请： PCT/JP2006/318735 WO 20060921
- 国际公布： WO2007/040057 WO 20070412
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
According to the present invention, a semiconductor device having a field effect transistor is provided. The field effect transistor comprises a gate insulating film 2 formed on a semiconductor layer 1 and a gate electrode 5 formed on the gate insulating film 2. The gate insulating film 2 has a silicon oxide film including a metal element 4 and nitrogen 3, and characteristics of the silicon oxide film are modified by adding the metal element 4 and nitrogen 3. Respective concentration distributions of the metal element 4 and nitrogen 3 in the gate insulating film 2 have maximum values on an interface side between the gate insulating film 2 and the gate electrode 5, and gradually decrease toward the semiconductor layer 1.
公开/授权文献
- US20090267163A1 Semiconductor Device 公开/授权日：2009-10-29
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