公开(公告)号：US07812412B2

公开(公告)日：2010-10-12

申请号：US12083057

申请日：2006-09-21

申请人： Kouji Watanabe ,  Nobuyuki Ikarashi ,  Kouji Masuzaki

发明人： Kouji Watanabe ,  Nobuyuki Ikarashi ,  Kouji Masuzaki

IPC分类号： H01L29/78

CPC分类号： H01L29/517 ,  H01L21/28035 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/518

摘要： According to the present invention, a semiconductor device having a field effect transistor is provided. The field effect transistor comprises a gate insulating film 2 formed on a semiconductor layer 1 and a gate electrode 5 formed on the gate insulating film 2. The gate insulating film 2 has a silicon oxide film including a metal element 4 and nitrogen 3, and characteristics of the silicon oxide film are modified by adding the metal element 4 and nitrogen 3. Respective concentration distributions of the metal element 4 and nitrogen 3 in the gate insulating film 2 have maximum values on an interface side between the gate insulating film 2 and the gate electrode 5, and gradually decrease toward the semiconductor layer 1.

摘要翻译： 根据本发明，提供了具有场效应晶体管的半导体器件。 场效应晶体管包括形成在半导体层1上的栅极绝缘膜2和形成在栅极绝缘膜2上的栅极电极5.栅极绝缘膜2具有包括金属元素4和氮3的氧化硅膜，并且特性 通过添加金属元素4和氮3来改性氧化硅膜。栅极绝缘膜2中的金属元素4和氮3的各自的浓度分布在栅极绝缘膜2和栅极之间的界面侧具有最大值 电极5，朝向半导体层1逐渐减小。

公开(公告)号：US20090267163A1

公开(公告)日：2009-10-29

申请号：US12083057

申请日：2006-09-21

申请人： Kouji Watanabe ,  Nobuyuki Ikarashi ,  Kouji Masuzaki

发明人： Kouji Watanabe ,  Nobuyuki Ikarashi ,  Kouji Masuzaki

IPC分类号： H01L29/78

CPC分类号： H01L29/517 ,  H01L21/28035 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/518

摘要： According to the present invention, a semiconductor device having a field effect transistor is provided. The field effect transistor comprises a gate insulating film 2 formed on a semiconductor layer 1 and a gate electrode 5 formed on the gate insulating film 2. The gate insulating film 2 has a silicon oxide film including a metal element 4 and nitrogen 3, and characteristics of the silicon oxide film are modified by adding the metal element 4 and nitrogen 3. Respective concentration distributions of the metal element 4 and nitrogen 3 in the gate insulating film 2 have maximum values on an interface side between the gate insulating film 2 and the gate electrode 5, and gradually decrease toward the semiconductor layer 1.

摘要翻译： 根据本发明，提供了具有场效应晶体管的半导体器件。 场效应晶体管包括形成在半导体层1上的栅极绝缘膜2和形成在栅极绝缘膜2上的栅极电极5.栅极绝缘膜2具有包括金属元素4和氮3的氧化硅膜，并且特性 通过添加金属元素4和氮3来改性氧化硅膜。栅极绝缘膜2中的金属元素4和氮3的各自的浓度分布在栅极绝缘膜2和栅极之间的界面侧具有最大值 电极5，朝向半导体层1逐渐减小。

公开(公告)号：US07821823B2

公开(公告)日：2010-10-26

申请号：US12095866

申请日：2006-12-01

申请人： Hiroshi Sunamura ,  Kouji Masuzaki ,  Masayuki Terai

发明人： Hiroshi Sunamura ,  Kouji Masuzaki ,  Masayuki Terai

IPC分类号： G11C16/04

CPC分类号： H01L21/28282 ,  G11C16/0466 ,  H01L29/4234 ,  H01L29/42344 ,  H01L29/792

摘要： Disclosed is a semiconductor storage device comprising a semiconductor substrate, a first and a second impurity diffusion layer formed in the semiconductor substrate, a gate insulating film formed on the semiconductor substrate, and a first gate electrode formed on the semiconductor substrate via the gate insulating film. The gate insulating film has a nitrogen-containing silicon oxide film inside, and a silicon oxide film is so arranged on both sides of the nitrogen-containing silicon oxide film as to sandwich the nitrogen-containing silicon oxide film. In addition, the nitrogen composition in the nitrogen-containing silicon oxide film is increased from the semiconductor substrate side to the first gate electrode side.

摘要翻译： 公开了一种半导体存储装置，包括半导体衬底，形成在半导体衬底中的第一和第二杂质扩散层，形成在半导体衬底上的栅极绝缘膜，以及通过栅极绝缘膜形成在半导体衬底上的第一栅电极 。 栅极绝缘膜在内部具有含氮氧化硅膜，并且在含氮氧化硅膜的两侧配置氧化硅膜以夹持含氮氧化硅膜。 此外，含氮氧化硅膜中的氮组成从半导体衬底侧增加到第一栅电极侧。

公开(公告)号：US08283732B2

公开(公告)日：2012-10-09

申请号：US12588039

申请日：2009-10-01

申请人： Hiroshi Sunamura ,  Kouji Masuzaki

发明人： Hiroshi Sunamura ,  Kouji Masuzaki

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/823835

摘要： Provided is a semiconductor device including a substrate, a gate insulating film which is formed on the substrate, and a gate electrode which is provided on the gate insulating film. The gate electrode includes a first metal silicide including a first metal material, and a second metal silicide including one of a second metal material and the second metal material in a contact portion between the gate insulating film and the gate electrode. The second metal silicide including the second metal material is a metal-rich silicide in which the composition ratio of the second metal material to silicon in the second metal silicide including the second metal is greater than 1.

摘要翻译： 提供了一种半导体器件，其包括衬底，形成在衬底上的栅极绝缘膜和设置在栅极绝缘膜上的栅电极。 栅极电极包括第一金属硅化物，第一金属硅化物和第二金属硅化物，第二金属硅化物，其包括第二金属材料和第二金属材料，位于栅极绝缘膜和栅电极之间的接触部分中。 包括第二金属材料的第二金属硅化物是富金属硅化物，其中包括第二金属的第二金属硅化物中的第二金属材料与硅的组成比大于1。

公开(公告)号：US20090316484A1

公开(公告)日：2009-12-24

申请号：US12095866

申请日：2006-12-01

申请人： Hiroshi Sunamura ,  Kouji Masuzaki ,  Masayuki Terai

发明人： Hiroshi Sunamura ,  Kouji Masuzaki ,  Masayuki Terai

IPC分类号： G11C16/04 ,  H01L29/792 ,  H01L21/336

CPC分类号： H01L21/28282 ,  G11C16/0466 ,  H01L29/4234 ,  H01L29/42344 ,  H01L29/792

摘要： Disclosed is a semiconductor storage device comprising a semiconductor substrate, a first and a second impurity diffusion layer formed in the semiconductor substrate, a gate insulating film formed on the semiconductor substrate, and a first gate electrode formed on the semiconductor substrate via the gate insulating film. The gate insulating film has a nitrogen-containing silicon oxide film inside, and a silicon oxide film is so arranged on both sides of the nitrogen-containing silicon oxide film as to sandwich the nitrogen-containing silicon oxide film. In addition, the nitrogen composition in the nitrogen-containing silicon oxide film is increased from the semiconductor substrate side to the first gate electrode side.

摘要翻译： 公开了一种半导体存储装置，包括半导体衬底，形成在半导体衬底中的第一和第二杂质扩散层，形成在半导体衬底上的栅极绝缘膜，以及通过栅极绝缘膜形成在半导体衬底上的第一栅电极 。 栅极绝缘膜在内部具有含氮氧化硅膜，并且在含氮氧化硅膜的两侧配置氧化硅膜以夹持含氮氧化硅膜。 此外，含氮氧化硅膜中的氮组成从半导体衬底侧增加到第一栅电极侧。