Invention Grant
US07813103B2 Time-based wafer de-chucking from an electrostatic chuck having separate RF BIAS and DC chucking electrodes 有权
从具有分离的RF BIAS和DC夹持电极的静电卡盘的基于时间的晶片去卡夹

Time-based wafer de-chucking from an electrostatic chuck having separate RF BIAS and DC chucking electrodes
Abstract:
An electrostatic chuck in a reactor chamber has a cathode electrode insulated from ground, a chucking electrode insulated from the cathode electrode and a dielectric layer overlying the chucking electrode that provides a workpiece support surface. A D.C. chucking voltage supply is coupled to the chucking electrode. An RF power generator is coupled to the cathode electrode. A voltage sensing apparatus is coupled to the chucking electrode and to the cathode electrode to monitor the voltage difference between them during discharge after removal of RF and DC power at the conclusion of processing. The reactor includes a controller programmed to raise the lift pins during electrode discharge as soon as the voltage sensing apparatus detects equal voltages simultaneously on the chucking and cathode electrodes.
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