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1.发明申请公开(公告)号：US20120052690A1
公开(公告)日：2012-03-01
申请号：US13080561
申请日：2011-04-05
IPC分类号： H01L21/3065 , C23F1/00 , C23F1/08
CPC分类号： H01J37/20 , H01J37/32715 , H01J37/32724 , H01J2237/334 , H01L21/67109 , H01L21/6831
摘要： Methods and systems for temperature enhanced chucking and dechucking of resistive substrates in a plasma processing apparatus are described herein. In certain embodiments, methods and systems incorporate modulating a glass carrier substrate temperature during a plasma etch process to chuck and dechuck the carrier at first temperatures elevated relative to second temperatures utilized during plasma etching. In embodiments, one or more of plasma heat, lamp heat, resistive heat, and fluid heat transfer are controlled to modulate the carrier substrate temperature between chucking temperatures and process temperatures with each run of the plasma etch process.
摘要翻译： 本文描述了用于等离子体处理装置中的电阻衬底的温度升高夹持和脱扣的方法和系统。 在某些实施方案中，方法和系统包括在等离子体蚀刻工艺期间调节玻璃载体衬底温度，以在相对于在等离子体蚀刻期间使用的第二温度升高的第一温度下卡住和剥离载体。 在实施例中，控制等离子体热，灯热，电阻热和流体热传递中的一种或多种，以在等离子体蚀刻工艺的每次运行中调制夹持温度和工艺温度之间的载体衬底温度。
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公开(公告)号：US20110157760A1
公开(公告)日：2011-06-30
申请号：US12884967
申请日：2010-09-17
IPC分类号： H01L21/687
CPC分类号： H01L21/6833 , Y10T279/23
摘要： Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck may include a body having a notched upper peripheral edge, defined by a first surface perpendicular to a body sidewall and a stepped second surface disposed between the first surface and a body upper surface, and a plurality of holes disposed through the body along the first surface; a plurality of fasteners disposed through the plurality of holes to couple the body to a base disposed beneath the body; a dielectric member disposed above the body upper surface to electrostatically retain a substrate; an insulator ring disposed about the body within the notched upper peripheral edge and having a stepped inner sidewall that mates with the stepped second surface to define a non-linear interface therebetween; and an edge ring disposed over the insulator ring, the non-linear interface limiting arcing between the edge ring and the fastener.
摘要翻译： 本文提供了静电卡盘的实施例。 在一些实施例中，静电吸盘可以包括具有切口的上周边边缘的主体，该顶部边缘由垂直于主体侧壁的第一表面和设置在第一表面和主体上表面之间的阶梯状第二表面限定， 沿着第一面穿过身体; 多个紧固件，其布置成穿过所述多个孔，以将所述主体连接到设置在所述主体下方的底座; 设置在所述主体上表面上方的电介质部件，以静电保持基板; 绝缘体环，其围绕所述主体设置在所述凹口的上周边边缘内并且具有与所述阶梯状的第二表面配合以形成其间的非线性界面的阶梯状内侧壁; 以及设置在所述绝缘体环上的边缘环，所述非线性界面限制所述边缘环和所述紧固件之间的电弧。
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公开(公告)号：US6095084A
公开(公告)日：2000-08-01
申请号：US893599
申请日：1997-07-14
申请人： Shamouil Shamouilian , Ananda H. Kumar , Arnold Kholodenko , Dennis S. Grimard , Jonathan D. Mohn , Michael G. Chafin , Kenneth S. Collins
发明人： Shamouil Shamouilian , Ananda H. Kumar , Arnold Kholodenko , Dennis S. Grimard , Jonathan D. Mohn , Michael G. Chafin , Kenneth S. Collins
IPC分类号： C23C16/00
CPC分类号： C23C16/00
摘要： A process chamber 55 for processing a semiconductor substrate 60 in a plasma, comprises a process gas distributor 100 for distributing process gas into a plasma zone 65 in the chamber. An inductor antenna 135 is used to form an inductive plasma from the process gas in the plasma zone. A primary bias electrode 145 on a ceiling 140 of the chamber 55 has a conducting surface 150 exposed to the plasma zone 65. A dielectric member 155 comprising a power electrode 165 embedded therein, has a receiving surface for receiving a substrate 60. A secondary bias electrode 170 below the dielectric member 155 has a conducting surface 175 exposed to the plasma zone 65. An electrode voltage supply 180 maintains the power electrode 165, primary bias electrode 145, and secondary bias electrode 170, at different electrical potentials to provide a high density, highly directional, plasma in the plasma zone 65 of the chamber 55.
摘要翻译： 用于处理等离子体中的半导体衬底60的处理室55包括用于将处理气体分配到室中的等离子体区65中的处理气体分配器100。 电感天线135用于从等离子体区域中的处理气体形成感应等离子体。 腔室55的天花板140上的主偏压电极145具有暴露于等离子体区域65的导电表面150.包括嵌入其中的功率电极165的电介质构件155具有用于接收衬底60的接收表面。次级偏压 在电介质构件155下方的电极170具有暴露于等离子体区65的导电表面175.电极电压源180将功率电极165，初级偏压电极145和次级偏置电极170保持在不同的电位以提供高密度 ，在室55的等离子体区65中的高度方向性的等离子体。
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4.发明授权Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same 失效混合约翰森 - 拉贝克静电卡盘具有将卡盘与其上所支撑的晶片分离的高电阻台面及其制造方法
公开(公告)号：US5903428A
公开(公告)日：1999-05-11
申请号：US937714
申请日：1997-09-25
IPC分类号： B23Q3/15 , H01L21/302 , H01L21/3065 , H01L21/67 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , Y10T279/23
摘要： A hybrid Johnsen-Rahbek chuck that provides a combination of both Coulombic and Johnsen-Rahbek chucking mechanisms. More specifically, the chuck contains a plurality of dielectric mesas deposited upon particular regions of the support surface of a chuck. The body of the chuck is generally fabricated from a Johnsen-Rahbek semiconducting dielectric. The mesas are formed from a thin film deposition of a highly-resistive dielectric. Consequently, the thin, highly resistive film prevents excess DC standby current as well as reduces the dependence of the electrostatic chuck performance on the wafer backside morphology and composition.
摘要翻译： 一种混合的约翰森 - 拉贝克夹克，提供库仑和约翰森 - 拉赫比克夹紧机制的组合。 更具体地，卡盘包含沉积在卡盘的支撑表面的特定区域上的多个电介质台面。 卡盘的主体通常由Johnsen-Rahbek半导体电介质制造。 台面由高电阻电介质的薄膜沉积形成。 因此，薄的高电阻膜防止过剩的直流待机电流以及减小静电卡盘性能对晶片背面形态和组成的依赖性。
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公开(公告)号：US5636098A
公开(公告)日：1997-06-03
申请号：US439010
申请日：1995-05-11
申请人： Joseph Salfelder , Dennis Grimard , John F. Cameron , Chandra Deshpandey , Robert Ryan , Michael G. Chafin
发明人： Joseph Salfelder , Dennis Grimard , John F. Cameron , Chandra Deshpandey , Robert Ryan , Michael G. Chafin
IPC分类号： H02N13/00 , H01L21/683
CPC分类号： H01L21/6833 , H01L21/6831
摘要： An erosion resistant electrostatic chuck 20 for holding a substrate 45 having a peripheral edge 50, in an erosive environment, comprises an electrostatic member 25 including (i) an electrode 30, and (ii) an insulator 35 covering the electrode. A barrier 55 is circumferentially disposed about the electrostatic member 25. The barrier 55 comprises a first contact surface 60 capable of being pressed against the peripheral edge 50 of the substrate 45 to form a seal around the substrate 45 to reduce exposure of the electrostatic member 25 of the chuck 20 to the erosive environment.
摘要翻译： 用于在侵蚀环境中保持具有周边边缘50的基板45的防腐蚀静电卡盘20包括静电部件25，静电部件25包括（i）电极30和（ii）覆盖电极的绝缘体35。 阻挡件55围绕静电部件25周向设置。阻挡件55包括第一接触表面60，该第一接触表面60能够抵靠基板45的周边边缘50，以围绕基板45形成密封，以减少静电部件25的暴露 的卡盘20到腐蚀环境。
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6.发明授权公开(公告)号：US08580693B2
公开(公告)日：2013-11-12
申请号：US13080561
申请日：2011-04-05
IPC分类号： H01L21/3065 , C23F1/00
CPC分类号： H01J37/20 , H01J37/32715 , H01J37/32724 , H01J2237/334 , H01L21/67109 , H01L21/6831
摘要： Methods and systems for temperature enhanced chucking and dechucking of resistive substrates in a plasma processing apparatus are described herein. In certain embodiments, methods and systems incorporate modulating a glass carrier substrate temperature during a plasma etch process to chuck and dechuck the carrier at first temperatures elevated relative to second temperatures utilized during plasma etching. In embodiments, one or more of plasma heat, lamp heat, resistive heat, and fluid heat transfer are controlled to modulate the carrier substrate temperature between chucking temperatures and process temperatures with each run of the plasma etch process.
摘要翻译： 本文描述了用于等离子体处理装置中的电阻衬底的温度升高夹持和脱扣的方法和系统。 在某些实施方案中，方法和系统包括在等离子体蚀刻工艺期间调节玻璃载体衬底温度，以在相对于在等离子体蚀刻期间使用的第二温度升高的第一温度下卡住和剥离载体。 在实施例中，控制等离子体热，灯热，电阻热和流体热传递中的一种或多种，以在等离子体蚀刻工艺的每次运行中调制夹持温度和工艺温度之间的载体衬底温度。
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公开(公告)号：US08270141B2
公开(公告)日：2012-09-18
申请号：US12884967
申请日：2010-09-17
IPC分类号： H02T23/00
CPC分类号： H01L21/6833 , Y10T279/23
摘要： Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck may include a body having a notched upper peripheral edge, defined by a first surface perpendicular to a body sidewall and a stepped second surface disposed between the first surface and a body upper surface, and a plurality of holes disposed through the body along the first surface; a plurality of fasteners disposed through the plurality of holes to couple the body to a base disposed beneath the body; a dielectric member disposed above the body upper surface to electrostatically retain a substrate; an insulator ring disposed about the body within the notched upper peripheral edge and having a stepped inner sidewall that mates with the stepped second surface to define a non-linear interface therebetween; and an edge ring disposed over the insulator ring, the non-linear interface limiting arcing between the edge ring and the fastener.
摘要翻译： 本文提供了静电卡盘的实施例。 在一些实施例中，静电吸盘可以包括具有切口的上周边边缘的主体，该顶部边缘由垂直于主体侧壁的第一表面和设置在第一表面和主体上表面之间的阶梯状第二表面限定， 沿着第一面穿过身体; 多个紧固件，其布置成穿过所述多个孔，以将所述主体连接到设置在所述主体下方的底座; 设置在所述主体上表面上方的电介质部件，以静电保持基板; 绝缘体环，其围绕所述主体设置在所述凹口的上周边边缘内并且具有与所述阶梯状的第二表面配合的阶梯状的内侧壁，以在其间界定非线性界面; 以及设置在所述绝缘体环上的边缘环，所述非线性界面限制所述边缘环和所述紧固件之间的电弧。
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公开(公告)号：US06273958B1
公开(公告)日：2001-08-14
申请号：US09329020
申请日：1999-06-09
申请人： Shamouil Shamouilian , Ananda H. Kumar , Siamak Salimian , Mahmoud Dahimene , Michael G. Chafin , Dennis S. Grimard
发明人： Shamouil Shamouilian , Ananda H. Kumar , Siamak Salimian , Mahmoud Dahimene , Michael G. Chafin , Dennis S. Grimard
IPC分类号： C23C1600
摘要： A support 55 comprises a dielectric 60 covering a primary electrode 70, the dielectric 60 having a surface 75 adapted to receive a substrate 25 and a conduit 160 that extends through the dielectric 60. The thickness of a portion of the dielectric 60 between an edge 195 of the primary electrode 70 and a surface 180 of the conduit 160 is sufficiently large to reduce the incidence of plasma formation in the conduit 160 when the primary electrode 70 is charged by an RF voltage to form a plasma of gas in the chamber 30 during processing of the substrate 25.
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9.发明申请Time-based wafer de-chucking from an electrostatic chuck having separate RF bias and DC chucking electrodes 有权从具有分离的RF偏压和DC夹持电极的静电卡盘的基于时间的晶片去卡夹公开(公告)号：US20090097185A1
公开(公告)日：2009-04-16
申请号：US11974502
申请日：2007-10-11
IPC分类号： H02N13/00
CPC分类号： H02N13/00 , H01J37/32091 , H01J37/32174 , H01L21/6833 , H01L21/68742
摘要： An electrostatic chuck in a reactor chamber has a cathode electrode insulated from ground, a chucking electrode insulated from the cathode electrode and a dielectric layer overlying the chucking electrode that provides a workpiece support surface. A D.C. chucking voltage supply is coupled to the chucking electrode. An RF power generator is coupled to the cathode electrode. A voltage sensing apparatus is coupled to the chucking electrode and to the cathode electrode to monitor the voltage difference between them during discharge after removal of RF and DC power at the conclusion of processing. The reactor includes a controller programmed to raise the lift pins during electrode discharge as soon as the voltage sensing apparatus detects equal voltages simultaneously on the chucking and cathode electrodes.
摘要翻译： 反应器室中的静电卡盘具有与地绝缘的阴极电极，与阴极绝缘的夹持电极和覆盖夹持电极的提供工件支撑表面的电介质层。 夹紧电压供应装置连接到夹持电极。 RF发生器耦合到阴极电极。 电压感测装置耦合到夹持电极和阴极电极，以在处理结束时去除RF和DC电力之后，在放电期间监测它们之间的电压差。 电抗器包括一个控制器，其被编程为一旦电压感测装置同时在夹紧和阴极电极上检测相同的电压，就可以在电极放电期间升高升降管脚。
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10.发明申请NON-INTRUSIVE MEASUREMENT OF A WAFER DC SELF-BIAS IN SEMICONDUCTOR PROCESSING EQUIPMENT 有权半导体加工设备中的直流自偏式非调谐测量公开(公告)号：US20140375299A1
公开(公告)日：2014-12-25
申请号：US14283159
申请日：2014-05-20
IPC分类号： G01R19/00 , H01L21/683
CPC分类号： H01J37/00 , H01J37/32715 , H01J37/32935 , H01L21/6833
摘要： A direct (DC) voltage is applied to an electrode at a voltage value to clamp a workpiece to an electrostatic chuck in a processing chamber. The electrode is embedded into the electrostatic chuck. An electrostatic chuck current through the electrode at the DC voltage is measured. A DC self bias induced on the workpiece by a plasma is determined based on the electrostatic chuck current and the applied voltage.
摘要翻译： 将直流（DC）电压以电压值施加到电极，以将工件夹紧到处理室中的静电卡盘。 电极嵌入静电卡盘。 测量在直流电压下通过电极的静电卡盘电流。 基于静电卡盘电流和施加的电压来确定通过等离子体在工件上感应的DC自偏压。
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