发明授权
- 专利标题： Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal
- 专利标题（中）： 生产六方氮化硼单晶和六方氮化硼单晶的方法
-
申请号： US11837557申请日： 2007-08-13
-
公开(公告)号： US07815733B2公开(公告)日： 2010-10-19
- 发明人: Makoto Iwai , Katsuhiro Imai , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara , Hiroaki Isobe
- 申请人： Makoto Iwai , Katsuhiro Imai , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara , Hiroaki Isobe
- 申请人地址： JP Nagoya JP Katano-Shi
- 专利权人： NGK Insulators, Ltd.,Yusuke Mori
- 当前专利权人： NGK Insulators, Ltd.,Yusuke Mori
- 当前专利权人地址： JP Nagoya JP Katano-Shi
- 代理机构： Burr & Brown
- 优先权： JP2005-039423 20050216
- 主分类号： C30B11/00
- IPC分类号： C30B11/00 ; C30B28/12
摘要：
A method of growing hexagonal boron nitride single crystal is provided. Hexagonal boron nitride single crystal is grown in calcium nitride flux by heating, or heating and then slowly cooling, boron nitride and a calcium series material in an atmosphere containing nitrogen. Bulk hexagonal boron nitride single crystal can thereby successfully be grown.