Invention Grant
US07816240B2 Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s)
有权
制造具有多层沉积金属源和/或漏极的半导体绝缘栅场效应晶体管的方法，
- Patent Title: Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s)
- Patent Title (中): 制造具有多层沉积金属源和/或漏极的半导体绝缘栅场效应晶体管的方法，
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Application No.: US11678397Application Date: 2007-02-23
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Publication No.: US07816240B2Publication Date: 2010-10-19
- Inventor: Carl M. Faulkner , Daniel J. Connelly , Paul A. Clifton , Daniel E. Grupp
- Applicant: Carl M. Faulkner , Daniel J. Connelly , Paul A. Clifton , Daniel E. Grupp
- Applicant Address: US CA Santa Monica
- Assignee: Acorn Technologies, Inc.
- Current Assignee: Acorn Technologies, Inc.
- Current Assignee Address: US CA Santa Monica
- Agency: Sonnenschein Nath & Rosenthal LLP
- Main IPC: H01L21/28
- IPC: H01L21/28
Abstract:
A metal source/drain field effect transistor is fabricated such that the source/drain regions are deposited, multilayer structures, with at least a second metal deposited on exposed surfaces of a first metal.
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