Low compressive force, non-silicone, high thermal conducting formulation for thermal interface material and package

Invention Grant

US07816785B2 Low compressive force, non-silicone, high thermal conducting formulation for thermal interface material and package 有权

Title translation: 用于热界面材料和封装的低压缩力，非硅树脂，高导热配方

Please log in to see more content

Patent Title: Low compressive force, non-silicone, high thermal conducting formulation for thermal interface material and package
Patent Title (中): 用于热界面材料和封装的低压缩力，非硅树脂，高导热配方
Application No.: US12357744

Application Date: 2009-01-22
Publication No.: US07816785B2

Publication Date: 2010-10-19
Inventor: Sushumna Iruvanti , Randall G. Kemink , Rajneesh Kumar , Steven P. Ostrander , Prabjit Singh
Applicant: Sushumna Iruvanti , Randall G. Kemink , Rajneesh Kumar , Steven P. Ostrander , Prabjit Singh
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Roberts Mlotkowski Safran & Cole, P.C.
Agent Joseph Petrokaitis
Main IPC: H01L23/10
IPC: H01L23/10

Low compressive force, non-silicone, high thermal conducting formulation for thermal interface material and package

Abstract:

An improved thermal interface material for semiconductor devices is provided. More particularly, low compressive force, non-silicone, high thermal conductivity formulations for thermal interface material is provided. The thermal interface material comprises a composition of non-silicone organics exhibiting thermal conductivity of approximately 5.5 W/mK or greater and a compressed bond-line thickness of approximately 100 microns or less using a compressive force of approximately 100 psi or less.

Abstract(Chinese):

提供了一种用于半导体器件的改进的热界面材料。更具体地，提供了用于热界面材料的低压缩力，非硅氧烷，高导热性配方。热界面材料包括使用约100psi或更小的压缩力显示约5.5W / mK或更高的导热率和约100微米或更小的压缩粘合线厚度的非硅氧烷有机物的组合物。

Public/Granted literature

US20100181663A1 LOW COMPRESSIVE FORCE, NON-SILICONE, HIGH THERMAL CONDUCTING FORMULATION FOR THERMAL INTERFACE MATERIAL AND PACKAGE Public/Granted day:2010-07-22

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/02	.容器；封接（H01L23/12，H01L23/34，H01L23/48，H01L23/552优先）
H01L23/10	..按部件间，例如在容器的帽盖和基座之间或在容器的引线和器壁之间的封接的材料或配置的特点进行区分的