Invention Grant
- Patent Title: Low compressive force, non-silicone, high thermal conducting formulation for thermal interface material and package
- Patent Title (中): 用于热界面材料和封装的低压缩力,非硅树脂,高导热配方
-
Application No.: US12357744Application Date: 2009-01-22
-
Publication No.: US07816785B2Publication Date: 2010-10-19
- Inventor: Sushumna Iruvanti , Randall G. Kemink , Rajneesh Kumar , Steven P. Ostrander , Prabjit Singh
- Applicant: Sushumna Iruvanti , Randall G. Kemink , Rajneesh Kumar , Steven P. Ostrander , Prabjit Singh
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Joseph Petrokaitis
- Main IPC: H01L23/10
- IPC: H01L23/10

Abstract:
An improved thermal interface material for semiconductor devices is provided. More particularly, low compressive force, non-silicone, high thermal conductivity formulations for thermal interface material is provided. The thermal interface material comprises a composition of non-silicone organics exhibiting thermal conductivity of approximately 5.5 W/mK or greater and a compressed bond-line thickness of approximately 100 microns or less using a compressive force of approximately 100 psi or less.
Public/Granted literature
Information query
IPC分类: