发明授权
- 专利标题: Light emitting device and method for manufacturing the same
- 专利标题(中): 发光元件及其制造方法
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申请号: US10933507申请日: 2004-09-03
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公开(公告)号: US07816863B2公开(公告)日: 2010-10-19
- 发明人: Shunpei Yamazaki , Junichiro Sakata , Takashi Hamada , Masaharu Nagai , Yutaka Matsuda
- 申请人: Shunpei Yamazaki , Junichiro Sakata , Takashi Hamada , Masaharu Nagai , Yutaka Matsuda
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2003-322223 20030912
- 主分类号: H05B33/22
- IPC分类号: H05B33/22
摘要:
An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an anode, and a bank covering an edge portion of the anode contain-chemically and physically stable silicon oxide, or are made of a material containing silicon oxide as its main component in order to accomplish a light emitting device having high stability. Generation of heat in a light emitting panel can be suppressed in addition to increase in efficiency (luminance/current) of a light emitting panel according to the structure of the present invention. Consequently, synergistic effect on reliability of a light emitting device is obtained.
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