发明授权
- 专利标题： Semiconductor device and method of producing the semiconductor device
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11812807申请日： 2007-06-21
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公开(公告)号： US07820558B2公开(公告)日： 2010-10-26
- 发明人: Tadahiro Ohmi , Akinobu Teramoto , Koutaro Tanaka
- 申请人： Tadahiro Ohmi , Akinobu Teramoto , Koutaro Tanaka
- 申请人地址： JP Miyagi JP Ibaraki
- 专利权人： Tohoku University,Foundation for Advancement of International Science
- 当前专利权人： Tohoku University,Foundation for Advancement of International Science
- 当前专利权人地址： JP Miyagi JP Ibaraki
- 代理机构： Foley & Lardner, LLP
- 优先权： JP2006-332003 20061208
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L29/76
摘要：
A film with small hysteresis and high voltage resistance is obtained by reducing the carbon content in a gate insulating film on a SiC substrate. Specifically, the carbon content in the gate insulating film is set to 1×1020 atoms/cm3 or less. For this, using a plasma processing apparatus, a silicon oxide film is formed on the SiC substrate and then the formed silicon oxide film is reformed by exposure to radicals containing nitrogen atoms. Thus, the gate insulating film excellent in electrical properties is obtained.
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