Invention Grant
US07821809B2 Nonvolatile memory device and method including resistor and transistor
有权
非易失存储器件和方法包括电阻和晶体管
- Patent Title: Nonvolatile memory device and method including resistor and transistor
- Patent Title (中): 非易失存储器件和方法包括电阻和晶体管
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Application No.: US11267825Application Date: 2005-11-07
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Publication No.: US07821809B2Publication Date: 2010-10-26
- Inventor: In-Kyeong Yoo , Myoung-Jae Lee , Sun-Ae Seo , David Seo
- Applicant: In-Kyeong Yoo , Myoung-Jae Lee , Sun-Ae Seo , David Seo
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2004-0090124 20041106
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A nonvolatile memory device including one resistor and one transistor. The resistor may correspond to a resistance layer electrically connected to a first impurity region and a second impurity region of the transistor.
Public/Granted literature
- US20060113614A1 Nonvolatile memory device and method including resistor and transistor Public/Granted day:2006-06-01
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