发明授权
- 专利标题: Sensor structure and method of fabricating the same
- 专利标题(中): 传感器结构及其制造方法
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申请号: US10913422申请日: 2004-08-09
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公开(公告)号: US07824618B2公开(公告)日: 2010-11-02
- 发明人: Yong Shin Kim , Yun Tae Kim , Hae Sik Yang , Young Jun Kim , Seung Chul Ha , Yoon Seok Yang
- 申请人: Yong Shin Kim , Yun Tae Kim , Hae Sik Yang , Young Jun Kim , Seung Chul Ha , Yoon Seok Yang
- 申请人地址: KR Daejeon-shi
- 专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人地址: KR Daejeon-shi
- 代理机构: Lowe Hauptman Ham & Berner LLP
- 优先权: KR10-2003-0097259 20031226
- 主分类号: G01N27/00
- IPC分类号: G01N27/00
摘要:
Provided is a sensor structure comprising a heater and a temperature sensor at the center of a membrane having a well structure, allowing a temperature to be rapidly controlled with low power, and the object is analyzed using a conductivity change measured at two or more substrate temperatures with a pair of detecting electrode and a detecting layer implemented on the heater, wherein the sensing layer can include a conductive particle and a non-conductive organic composite.
公开/授权文献
- US20050142034A1 Sensor structure and method of fabricating the same 公开/授权日:2005-06-30