Invention Grant
US07824972B2 Producing a thin film transistor substrate by using a photoresist pattern having regions of different thicknesses
有权
通过使用具有不同厚度的区域的光致抗蚀剂图案来生产薄膜晶体管基板
- Patent Title: Producing a thin film transistor substrate by using a photoresist pattern having regions of different thicknesses
- Patent Title (中): 通过使用具有不同厚度的区域的光致抗蚀剂图案来生产薄膜晶体管基板
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Application No.: US11985199Application Date: 2007-11-13
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Publication No.: US07824972B2Publication Date: 2010-11-02
- Inventor: Jong-hyun Choung , Byeong-jin Lee , Hong-sick Park , Sun-young Hong , Bong-kyun Kim , Won-suk Shin
- Applicant: Jong-hyun Choung , Byeong-jin Lee , Hong-sick Park , Sun-young Hong , Bong-kyun Kim , Won-suk Shin
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Innovation Counsel LLP
- Priority: KR10-2006-0114702 20061120
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84
Abstract:
A thin film transistor substrate that has reduced production cost and defect rate is presented. The thin film transistor substrate includes a gate wiring line formed on an insulating substrate and including a gate electrode, a data wiring line formed on the gate wiring line and including a source electrode and a drain electrode, a passivation layer pattern formed on parts of the data wiring line other than the drain electrode and a pixel region, and a pixel electrode electrically connected to the drain electrode. The pixel electrode includes zinc oxide.
Public/Granted literature
- US20080164471A1 Thin film transistor substrate and method of producing the same Public/Granted day:2008-07-10
Information query
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