发明授权
- 专利标题: Semiconductor apparatus and method of manufacturing the semiconductor apparatus
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12654559申请日: 2009-12-23
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公开(公告)号: US07824976B2公开(公告)日: 2010-11-02
- 发明人: Akio Kaneko , Kazuhiro Eguchi , Seiji Inumiya , Katsuyuki Sekine , Motoyuki Sato
- 申请人: Akio Kaneko , Kazuhiro Eguchi , Seiji Inumiya , Katsuyuki Sekine , Motoyuki Sato
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2003-305779 20030829
- 主分类号: H01L21/8249
- IPC分类号: H01L21/8249
摘要:
A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiO2 film, a film containing SiO2 as a main component and at least one of Hf and Zr, a film containing SiO2 as a main component and N, a film containing SiO2 as a main component, Hf and N, a film containing SiO2 as a main component, Zr and N, or a film containing SiO2 as a main component, Hf, Zr and N.