发明授权
- 专利标题： SiC semiconductor device and method for manufacturing the same
- 专利标题（中）： SiC半导体器件及其制造方法
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申请号： US12071717申请日： 2008-02-26
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公开(公告)号： US07824995B2公开(公告)日： 2010-11-02
- 发明人: Takeshi Endo , Tsuyoshi Yamamoto , Eiichi Okuno
- 申请人： Takeshi Endo , Tsuyoshi Yamamoto , Eiichi Okuno
- 申请人地址： JP Kariya
- 专利权人： Denso Corporation
- 当前专利权人： Denso Corporation
- 当前专利权人地址： JP Kariya
- 代理机构： Posz Law Group, PLC
- 优先权： JP2007-049703 20070228
- 主分类号： H01L29/72
- IPC分类号： H01L29/72
摘要：
A SiC semiconductor device includes: a SiC substrate having a main surface; a channel region on the substrate; first and second impurity regions on upstream and downstream sides of the channel region, respectively; a gate on the channel region through a gate insulating film. The channel region for flowing current between the first and second impurity regions is controlled by a voltage applied to the gate. An interface between the channel region and the gate insulating film has a hydrogen concentration equal to or greater than 2.6×1020 cm−3. The interface provides a channel surface perpendicular to a (0001)-orientation plane.
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