发明授权
- 专利标题： Method of making silicon carbide semiconductor device having multi-layered passivation film with uneven surfaces
- 专利标题（中）： 制造具有不平坦表面的多层钝化膜的碳化硅半导体器件的方法
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申请号： US12406578申请日： 2009-03-18
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公开(公告)号： US07825017B2公开(公告)日： 2010-11-02
- 发明人: Takeo Yamamoto , Takeshi Endo , Eiichi Okuno , Masaki Konishi
- 申请人： Takeo Yamamoto , Takeshi Endo , Eiichi Okuno , Masaki Konishi
- 申请人地址： JP Kariya JP Toyota
- 专利权人： DENSO CORPORATION,Toyota Jidosha Kabushiki Kaisha
- 当前专利权人： DENSO CORPORATION,Toyota Jidosha Kabushiki Kaisha
- 当前专利权人地址： JP Kariya JP Toyota
- 代理机构： Posz Law Group, PLC
- 优先权： JP2008-071308 20080319
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/283 ; H01L21/44 ; H01L21/441 ; H01L31/0312 ; H01L29/47
摘要：
A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed in a cell region of the drift layer, a surface electrode formed on the drift layer and electrically coupled to the semiconductor element through an opening of the insulation film, and a passivation film formed above the drift layer around the periphery of the cell region to cover an outer edge of the surface electrode. The passivation film has an opening through which the surface electrode is exposed outside. A surface of the passivation film is made uneven to increase a length from an inner edge of the opening of the passivation film to a chip edge measured along the surface of the passivation film.
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