发明授权
- 专利标题： Method of manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US12289271申请日： 2008-10-23
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公开(公告)号： US07825028B2公开(公告)日： 2010-11-02
- 发明人: Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
- 申请人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2004-210180 20040716
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
Disclosed is a method for manufacturing a semiconductor device comprising forming a hydrophobic interlayer insulating film having a relative dielectric constant of 3.5 or less above a semiconductor substrate, forming a recess in the interlayer insulating film, depositing a conductive material above the interlayer insulating film having the recess to form a conductive layer, selectively removing the conductive material deposited above the interlayer insulating film by polishing to expose a surface of the interlayer insulating film while leaving the conductive material in the recess, and subjecting the surface of the interlayer insulating film having the recess filled with the conductive material to pressure washing using a resin member and an alkaline washing liquid containing an inorganic alkali and exhibiting a pH of more than 9.
公开/授权文献
- US20090061626A1 Method of manunfacturing semiconductor device 公开/授权日：2009-03-05