发明授权
US07825041B2 Method of reworking a semiconductor substrate and method of forming a pattern of a semiconductor device
有权
半导体衬底的再加工方法以及形成半导体器件的图案的方法
- 专利标题： Method of reworking a semiconductor substrate and method of forming a pattern of a semiconductor device
- 专利标题（中）： 半导体衬底的再加工方法以及形成半导体器件的图案的方法
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申请号： US12068410申请日： 2008-02-06
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公开(公告)号： US07825041B2公开(公告)日： 2010-11-02
- 发明人: Eun-Sung Kim , Tae-Kyu Kim , Seok-Hwan Oh
- 申请人： Eun-Sung Kim , Tae-Kyu Kim , Seok-Hwan Oh
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2007-0013075 20070208
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A method of reworking a semiconductor substrate and a method of forming a pattern of semiconductor device using the same without damage to an organic anti-reflective coating (ARC) is provided. The method of reworking a semiconductor substrate includes forming a photoresist pattern on a substrate having the organic ARC formed thereon. An entire surface of the substrate having the photoresist pattern formed thereon may be exposed when a defect is present in the photoresist pattern. The entire-surface-exposed photoresist pattern may be removed by performing a developing process without damage to the organic ARC.
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