发明授权
US07829469B2 Method and system for uniformity control in ballistic electron beam enhanced plasma processing system
有权
弹道电子束增强等离子体处理系统均匀性控制方法与系统
- 专利标题： Method and system for uniformity control in ballistic electron beam enhanced plasma processing system
- 专利标题（中）： 弹道电子束增强等离子体处理系统均匀性控制方法与系统
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申请号： US11608889申请日： 2006-12-11
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公开(公告)号： US07829469B2公开(公告)日： 2010-11-09
- 发明人: Lee Chen , Hiromasa Mochiki
- 申请人： Lee Chen , Hiromasa Mochiki
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A method and system for adjusting and controlling the plasma uniformity in a plasma processing system is described. The plasma processing system includes an electron source electrode to which direct current (DC) power is coupled in order to generate a ballistic electron beam during the etching of the substrate. A ring electrode, provided about a periphery of the substrate and opposite the electron source electrode, is utilized to create a ring hollow cathode plasma to affect changes in the distribution of plasma density.
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