A demultiplexer using transistors for accessing memory cell arrays. The demultiplexer includes (a) a substrate; (b) 2N semiconductor regions which are parallel to one another and run in a first direction; (c) first N gate electrode lines, which (i) run in a second direction which is perpendicular to the first direction, (ii) are electrically insulated from the 2N semiconductor regions, and (iii) are disposed between the first plurality of memory cells and the contact region; (d) a contact region; (e) a first plurality of memory cells. An intersection transistor exists at each of intersections between the first N gate electrode lines and the 2N semiconductor regions. In response to pre-specified voltage potentials being applied to the contact region and the first N gate electrode lines, memory cells of the first plurality of memory cells disposed on only one of the 2N semiconductor regions are selected.