发明授权
- 专利标题: Magnetic memory element utilizing spin transfer switching
- 专利标题(中): 磁记忆元件利用自旋转移切换
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申请号: US12398181申请日: 2009-03-05
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公开(公告)号: US07829964B2公开(公告)日: 2010-11-09
- 发明人: Wei-Chuan Chen , Cheng-Tyng Yen , Ding-Yeong Wang
- 申请人: Wei-Chuan Chen , Cheng-Tyng Yen , Ding-Yeong Wang
- 申请人地址: TW Hsinchu
- 专利权人: Industrial Technology Research Institute
- 当前专利权人: Industrial Technology Research Institute
- 当前专利权人地址: TW Hsinchu
- 代理机构: Jianq Chyun IP Office
- 优先权: TW97142204A 20081031
- 主分类号: H01L29/82
- IPC分类号: H01L29/82
摘要:
A magnetic memory element utilizing spin transfer switching includes a pinned layer, a tunneling barrier layer and a free layer structure. The tunneling barrier layer is disposed on the pinned layer. The free layer structure includes a composite free layer. The composite free layer includes a first free layer, an insert layer and a second free layer. The first free layer is disposed on the tunneling barrier layer and has a first spin polarization factor and a first saturation magnetization. The insert layer is disposed on the first free layer. The second free layer is disposed on the insert layer and has a second spin polarization factor smaller than the first spin polarization factor and a second saturation magnetization smaller than the first saturation magnetization. Magnetization vectors of the first free layer and the second free layer are arranged as parallel-coupled.