公开(公告)号：US20110159316A1

公开(公告)日：2011-06-30

申请号：US12713193

申请日：2010-02-26

申请人： Yung-Hung Wang ,  Cheng-Tyng Yen ,  Shan-Yi Yang

发明人： Yung-Hung Wang ,  Cheng-Tyng Yen ,  Shan-Yi Yang

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  H01L43/10

摘要： A magnetoresistive device with perpendicular magnetization includes a magnetic reference layer, a first magnetic multi-layer film, a tunneling barrier layer, a second magnetic multi-layer film, and a magnetic free layer. The magnetic reference layer has a first magnetization direction, perpendicular to the magnetic reference layer. The first magnetic multi-layer film, having non-magnetic material layer, is disposed in contact on the magnetic reference layer. The tunneling barrier layer is disposed in contact on the first magnetic multi-layer film. The second magnetic multi-layer film, having non-magnetic material layer, is disposed in contact on the tunneling barrier layer. The magnetic free layer is disposed in contact on the second magnetic multi-layer film, having a second magnetization direction capable of being switched to be parallel or anti-parallel to the first magnetization direction.

摘要翻译： 具有垂直磁化的磁阻装置包括磁参考层，第一磁性多层膜，隧道势垒层，第二磁性多层膜和无磁性层。 磁参考层具有垂直于磁参考层的第一磁化方向。 具有非磁性材料层的第一磁性多层膜与磁性参考层接触地设置。 隧道势垒层与第一磁性多层膜接触地设置。 具有非磁性材料层的第二磁性多层膜与隧道势垒层接触地设置。 所述无磁性层与所述第二磁性多层膜接触地设置，所述第二磁性多层膜具有能够被切换为与所述第一磁化方向平行或反平行的第二磁化方向。

公开(公告)号：US20110001203A1

公开(公告)日：2011-01-06

申请号：US12883188

申请日：2010-09-16

申请人： Wei-Chuan Chen ,  Cheng-Tyng Yen ,  Ding-Yeong Wang

发明人： Wei-Chuan Chen ,  Cheng-Tyng Yen ,  Ding-Yeong Wang

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161

摘要： A magnetic memory element includes a pinned layer, a tunneling barrier layer, a free layer and a stabilizing layer. The tunneling barrier layer is disposed on the pinned layer. The free layer is disposed on the tunneling barrier layer. The stabilizing layer is disposed on the free layer.

摘要翻译： 磁存储元件包括钉扎层，隧道势垒层，自由层和稳定层。 隧道势垒层设置在钉扎层上。 自由层设置在隧道势垒层上。 稳定层设置在自由层上。

公开(公告)号：US20100297455A1

公开(公告)日：2010-11-25

申请号：US12846871

申请日：2010-07-30

申请人： Chung-Jen WU ,  Min-Chi Wang ,  Chung-Hung Chang ,  Meng-Yen Chou ,  Chin-Chang Chuang ,  Hsin-Wei Huang ,  Shu-Wan Lu ,  Chin-Min An ,  Chung-Hao Wu ,  Wen-Chang Chen ,  Cheng-Tyng Yen ,  Yu-Wen Wang ,  Kuo-Huang Hsieh

发明人： Chung-Jen WU ,  Min-Chi Wang ,  Chung-Hung Chang ,  Meng-Yen Chou ,  Chin-Chang Chuang ,  Hsin-Wei Huang ,  Shu-Wan Lu ,  Chin-Min An ,  Chung-Hao Wu ,  Wen-Chang Chen ,  Cheng-Tyng Yen ,  Yu-Wen Wang ,  Kuo-Huang Hsieh

IPC分类号： B32B27/28 ,  B05D3/06 ,  C08L43/04 ,  C08F2/48

CPC分类号： C09D183/08 ,  C08K5/544 ,  Y10T428/31663

摘要： The present invention relates to a process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, comprising adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)(4-x) to allow the silica moiety to carry a photo-polymerizable unsaturated group; and adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9, and x are as defined in the specification.The present invention also relates to a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material of the present invention is useful in microelectronic devices, semiconductor elements, and photoelectric elements.

摘要翻译： 本发明涉及一种制备聚酰亚胺/二氧化硅复合材料的前体溶液的方法和在基材上形成聚酰亚胺/二氧化硅复合材料膜的方法，包括加入硅烷化合物的单体以使聚（酰胺酸） 携带二氧化硅部分; 加入式（R6）xSi（R7）（4-x）的单体，使二氧化硅部分携带可光聚合的不饱和基团; 并加入式R8N（R9）2的单体以使聚酰胺酸携带可光聚合的不饱和基团，其中R6，R7，R8，R9和x如说明书中所定义。 本发明还涉及聚酰亚胺/二氧化硅复合材料的前体溶液和聚酰亚胺/二氧化硅复合材料。 本发明的复合材料可用于微电子器件，半导体元件和光电元件。

公开(公告)号：US07829964B2

公开(公告)日：2010-11-09

申请号：US12398181

申请日：2009-03-05

申请人： Wei-Chuan Chen ,  Cheng-Tyng Yen ,  Ding-Yeong Wang

发明人： Wei-Chuan Chen ,  Cheng-Tyng Yen ,  Ding-Yeong Wang

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161

摘要： A magnetic memory element utilizing spin transfer switching includes a pinned layer, a tunneling barrier layer and a free layer structure. The tunneling barrier layer is disposed on the pinned layer. The free layer structure includes a composite free layer. The composite free layer includes a first free layer, an insert layer and a second free layer. The first free layer is disposed on the tunneling barrier layer and has a first spin polarization factor and a first saturation magnetization. The insert layer is disposed on the first free layer. The second free layer is disposed on the insert layer and has a second spin polarization factor smaller than the first spin polarization factor and a second saturation magnetization smaller than the first saturation magnetization. Magnetization vectors of the first free layer and the second free layer are arranged as parallel-coupled.

摘要翻译： 利用自旋转移切换的磁存储元件包括钉扎层，隧道势垒层和自由层结构。 隧道势垒层设置在钉扎层上。 自由层结构包括复合自由层。 复合自由层包括第一自由层，插入层和第二自由层。 第一自由层设置在隧道势垒层上并具有第一自旋极化因数和第一饱和磁化强度。 插入层设置在第一自由层上。 第二自由层设置在插入层上，并且具有小于第一自旋极化因子的第二自旋极化因子和小于第一饱和磁化强度的第二饱和磁化强度。 第一自由层和第二自由层的磁化矢量被布置成平行耦合。

公开(公告)号：US08835935B2

公开(公告)日：2014-09-16

申请号：US13433272

申请日：2012-03-28

申请人： Chien-Chung Hung ,  Young-Shying Chen ,  Cheng-Tyng Yen ,  Chwan-Ying Lee

发明人： Chien-Chung Hung ,  Young-Shying Chen ,  Cheng-Tyng Yen ,  Chwan-Ying Lee

IPC分类号： H01L29/24

CPC分类号： H01L21/0475 ,  H01L29/66227 ,  H01L29/7827

摘要： A trench metal oxide semiconductor transistor device and a manufacturing method thereof are described. The trench metal oxide semiconductor transistor device includes a substrate of a first conductivity type, a drift region of the first conductivity type, a deep trench doped region of a second conductivity type, an epitaxial region of the second conductivity type, a trench gate, a gate insulating layer, a source region, a drain electrode and a source electrode. The drift region has at least one deep trench therein, and the deep trench doped region is disposed in the deep trench. The trench gate passes through the epitaxial region, and a distance between a bottom of the trench gate and a bottom of the deep trench doped region is 0.5˜3 μm.

摘要翻译： 描述了沟槽金属氧化物半导体晶体管器件及其制造方法。 沟槽金属氧化物半导体晶体管器件包括第一导电类型的衬底，第一导电类型的漂移区，第二导电类型的深沟槽掺杂区，第二导电类型的外延区，沟槽栅， 栅极绝缘层，源极区，漏极和源电极。 漂移区域中具有至少一个深沟槽，并且深沟槽掺杂区域设置在深沟槽中。 沟槽栅极通过外延区域，并且沟槽栅极的底部与深沟槽掺杂区域的底部之间的距离为0.5〜3μm。

公开(公告)号：US08421171B2

公开(公告)日：2013-04-16

申请号：US12960559

申请日：2010-12-06

申请人： Cheng-Tyng Yen ,  Yung-Hung Wang

发明人： Cheng-Tyng Yen ,  Yung-Hung Wang

IPC分类号： H01L29/82 ,  H01L43/00

CPC分类号： H01L43/08 ,  G11C11/161

摘要： A magnetic random access memory (MRAM) has a perpendicular magnetization direction. The MRAM includes a first magnetic layer, a second magnetic layer, a first polarization enhancement layer, a second polarization enhancement layer, a barrier layer, a spacer, and a free assisting layer. A pinned layer formed by the first magnetic layer and the first polarization enhancement layer has a first magnetization direction and a first perpendicular magnetic anisotropy. A free layer formed by the second magnetic layer and the second polarization enhancement layer has a second magnetization direction and a second perpendicular magnetic anisotropy. The barrier layer is disposed between the first polarization enhancement layer and the second polarization enhancement layer. The spacer is disposed on the second magnetic layer. The free assisting layer is disposed on the spacer and has an in-plane magnetic anisotropy. The spacer and the barrier layer are on opposite sides of the free layer.

摘要翻译： 磁性随机存取存储器（MRAM）具有垂直磁化方向。 MRAM包括第一磁性层，第二磁性层，第一极化增强层，第二极化增强层，阻挡层，间隔物和自由辅助层。 由第一磁性层和第一极化增强层形成的钉扎层具有第一磁化方向和第一垂直磁各向异性。 由第二磁性层和第二极化增强层形成的自由层具有第二磁化方向和第二垂直磁各向异性。 阻挡层设置在第一极化增强层和第二极化增强层之间。 间隔件设置在第二磁性层上。 自由辅助层设置在间隔物上并具有面内的磁各向异性。 间隔物和阻挡层位于自由层的相对侧上。

公开(公告)号：US08101703B2

公开(公告)日：2012-01-24

申请号：US12846871

申请日：2010-07-30

申请人： Chung-Jen Wu ,  Min-Chi Wang ,  Chung-Hung Chang ,  Meng-Yen Chou ,  Chin-Chang Chuang ,  Hsin-Wei Huang ,  Shu-Wan Lu ,  Chin-Min An ,  Chung-Hao Wu ,  Wen-Chang Chen ,  Cheng-Tyng Yen ,  Yu-Wen Wang ,  Kuo-Huang Hsieh

发明人： Chung-Jen Wu ,  Min-Chi Wang ,  Chung-Hung Chang ,  Meng-Yen Chou ,  Chin-Chang Chuang ,  Hsin-Wei Huang ,  Shu-Wan Lu ,  Chin-Min An ,  Chung-Hao Wu ,  Wen-Chang Chen ,  Cheng-Tyng Yen ,  Yu-Wen Wang ,  Kuo-Huang Hsieh

IPC分类号： C08G77/04

CPC分类号： C09D183/08 ,  C08K5/544 ,  Y10T428/31663

摘要： A process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, including adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)4-x to allow the silica moiety to carry a photo-polymerizable unsaturated group; adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9 and x are as defined in the specification. Also, a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material is useful in microelectronic devices, semiconductor elements, and photoelectric elements.

摘要翻译： 一种制备聚酰亚胺/二氧化硅复合材料的前体溶液的方法和在基材上形成聚酰亚胺/二氧化硅复合材料膜的方法，包括加入硅烷化合物的单体以使聚（酰胺酸）携带二氧化硅部分 ; 加入式（R6）xSi（R7）4-x的单体以使二氧化硅部分携带可光聚合的不饱和基团; 加入式R8N（R9）2的单体以使聚（酰胺酸）携带可光聚合的不饱和基团，其中R 6，R 7，R 8，R 9和X如说明书中所定义。 另外，聚酰亚胺/二氧化硅复合材料的前体溶液和聚酰亚胺/二氧化硅复合材料。 复合材料可用于微电子器件，半导体元件和光电元件。

公开(公告)号：US20110241139A1

公开(公告)日：2011-10-06

申请号：US12960559

申请日：2010-12-06

申请人： Cheng-Tyng Yen ,  Yung-Hung Wang

发明人： Cheng-Tyng Yen ,  Yung-Hung Wang

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161

摘要： A magnetic random access memory (MRAM) has a perpendicular magnetization direction. The MRAM includes a first magnetic layer, a second magnetic layer, a first polarization enhancement layer, a second polarization enhancement layer, a barrier layer, a spacer, and a free assisting layer. A pinned layer formed by the first magnetic layer and the first polarization enhancement layer has a first magnetization direction and a first perpendicular magnetic anisotropy. A free layer formed by the second magnetic layer and the second polarization enhancement layer has a second magnetization direction and a second perpendicular magnetic anisotropy. The barrier layer is disposed between the first polarization enhancement layer and the second polarization enhancement layer. The spacer is disposed on the second magnetic layer. The free assisting layer is disposed on the spacer and has an in-plane magnetic anisotropy. The spacer and the barrier layer are on opposite sides of the free layer.

摘要翻译： 磁性随机存取存储器（MRAM）具有垂直磁化方向。 MRAM包括第一磁性层，第二磁性层，第一极化增强层，第二极化增强层，阻挡层，间隔物和自由辅助层。 由第一磁性层和第一极化增强层形成的钉扎层具有第一磁化方向和第一垂直磁各向异性。 由第二磁性层和第二极化增强层形成的自由层具有第二磁化方向和第二垂直磁各向异性。 阻挡层设置在第一极化增强层和第二极化增强层之间。 间隔件设置在第二磁性层上。 自由辅助层设置在间隔物上并具有面内的磁各向异性。 间隔物和阻挡层位于自由层的相对侧上。

公开(公告)号：US08026562B2

公开(公告)日：2011-09-27

申请号：US12883188

申请日：2010-09-16

申请人： Wei-Chuan Chen ,  Cheng-Tyng Yen ,  Ding-Yeong Wang

发明人： Wei-Chuan Chen ,  Cheng-Tyng Yen ,  Ding-Yeong Wang

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161

摘要： A magnetic memory element includes a pinned layer, a tunneling barrier layer, a free layer and a stabilizing layer. The tunneling barrier layer is disposed on the pinned layer. The free layer is disposed on the tunneling barrier layer. The stabilizing layer is disposed on the free layer.

摘要翻译： 磁存储元件包括钉扎层，隧道势垒层，自由层和稳定层。 隧道势垒层设置在被钉扎层上。 自由层设置在隧道势垒层上。 稳定层设置在自由层上。

公开(公告)号：US20100109109A1

公开(公告)日：2010-05-06

申请号：US12398181

申请日：2009-03-05

申请人： Wei-Chuan Chen ,  Cheng-Tyng Yen ,  Ding-Yeong Wang

发明人： Wei-Chuan Chen ,  Cheng-Tyng Yen ,  Ding-Yeong Wang

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161

摘要： A magnetic memory element utilizing spin transfer switching includes a pinned layer, a tunneling barrier layer and a free layer structure. The tunneling barrier layer is disposed on the pinned layer. The free layer structure includes a composite free layer. The composite free layer includes a first free layer, an insert layer and a second free layer. The first free layer is disposed on the tunneling barrier layer and has a first spin polarization factor and a first saturation magnetization. The insert layer is disposed on the first free layer. The second free layer is disposed on the insert layer and has a second spin polarization factor smaller than the first spin polarization factor and a second saturation magnetization smaller than the first saturation magnetization. Magnetization vectors of the first free layer and the second free layer are arranged as parallel-coupled.

摘要翻译： 利用自旋转移切换的磁存储元件包括钉扎层，隧道势垒层和自由层结构。 隧道势垒层设置在钉扎层上。 自由层结构包括复合自由层。 复合自由层包括第一自由层，插入层和第二自由层。 第一自由层设置在隧道势垒层上并具有第一自旋极化因数和第一饱和磁化强度。 插入层设置在第一自由层上。 第二自由层设置在插入层上，并且具有小于第一自旋极化因子的第二自旋极化因子和小于第一饱和磁化强度的第二饱和磁化强度。 第一自由层和第二自由层的磁化矢量被布置成平行耦合。