发明授权
US07829976B2 Microelectronic devices and methods for forming interconnects in microelectronic devices
有权
用于在微电子器件中形成互连的微电子器件和方法
- 专利标题: Microelectronic devices and methods for forming interconnects in microelectronic devices
- 专利标题(中): 用于在微电子器件中形成互连的微电子器件和方法
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申请号: US12419029申请日: 2009-04-06
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公开(公告)号: US07829976B2公开(公告)日: 2010-11-09
- 发明人: Kyle K. Kirby , Salman Akram , David R. Hembree , Sidney B. Rigg , Warren M. Farnworth , William M. Hiatt
- 申请人: Kyle K. Kirby , Salman Akram , David R. Hembree , Sidney B. Rigg , Warren M. Farnworth , William M. Hiatt
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Perkins Coie LLP
- 主分类号: H01L29/40
- IPC分类号: H01L29/40
摘要:
Microelectronic devices, methods for packaging microelectronic devices, and methods for forming interconnects in microelectronic devices are disclosed herein. In one embodiment, a method comprises providing a microelectronic substrate having a front side and a backside. The substrate has a microelectronic die including an integrated circuit and a terminal operatively coupled to the integrated circuit. The method also includes forming a passage at least partially through the substrate and having an opening at the front side and/or backside of the substrate. The method further includes sealing the opening with a conductive cap that closes one end of the passage while another end of the passage remains open. The method then includes filling the passage with a conductive material.
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