公开(公告)号：US20080138973A1

公开(公告)日：2008-06-12

申请号：US12027106

申请日：2008-02-06

申请人： Kyle K. Kirby ,  Salman Akram ,  David R. Hembree ,  Sidney B. Rigg ,  Warren M. Farnworth ,  William M. Hiatt

发明人： Kyle K. Kirby ,  Salman Akram ,  David R. Hembree ,  Sidney B. Rigg ,  Warren M. Farnworth ,  William M. Hiatt

IPC分类号： H01L21/44 ,  H01L21/768

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H05K1/0306 ,  H05K3/4038 ,  H05K3/422 ,  H05K3/423 ,  H05K2201/0305 ,  H05K2201/09827 ,  H05K2203/072 ,  H05K2203/1147 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Microelectronic devices, methods for packaging microelectronic devices, and methods for forming interconnects in microelectronic devices are disclosed herein. In one embodiment, a method comprises providing a microelectronic substrate having a front side and a backside. The substrate has a microelectronic die including an integrated circuit and a terminal operatively coupled to the integrated circuit. The method also includes forming a passage at least partially through the substrate and having an opening at the front side and/or backside of the substrate. The method further includes sealing the opening with a conductive cap that closes one end of the passage while another end of the passage remains open. The method then includes filling the passage with a conductive material.

摘要翻译： 本文公开了微电子器件，用于封装微电子器件的方法，以及用于在微电子器件中形成互连的方法。 在一个实施例中，一种方法包括提供具有正面和背面的微电子衬底。 衬底具有包括集成电路的微电子管芯和可操作地耦合到集成电路的端子。 该方法还包括至少部分地形成通过基底并且在基底的前侧和/或后侧具有开口的通道。 该方法还包括用封闭通道一端的导电盖密封开口，同时通道的另一端保持打开。 该方法然后包括用导电材料填充通道。

公开(公告)号：US07960829B2

公开(公告)日：2011-06-14

申请号：US11216617

申请日：2005-08-31

申请人： Alan G. Wood ,  Warren M. Farnworth ,  David R. Hembree ,  Sidney B. Rigg ,  William M. Hiatt ,  Peter Benson ,  Kyle K. Kirby ,  Salman Akram

发明人： Alan G. Wood ,  Warren M. Farnworth ,  David R. Hembree ,  Sidney B. Rigg ,  William M. Hiatt ,  Peter Benson ,  Kyle K. Kirby ,  Salman Akram

IPC分类号： H01L23/12

CPC分类号： G03F7/0037 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y80/00 ,  G03F7/0047

摘要： A support structure for use with a semiconductor substrate in thinning, or backgrinding, thereof, as well as during post-thinning processing of the semiconductor substrate includes a portion that extends substantially along and around an outer periphery of the semiconductor substrate to impart the thinned semiconductor substrate with rigidity. The support structure may be configured as a ring or as a member that substantially covers an active surface of the semiconductor substrate and forms a protective structure over each semiconductor device carried by the active surface.

摘要翻译： 用于半导体衬底的减薄或后研磨以及在半导体衬底的后变薄处理期间的支撑结构包括基本上沿着半导体衬底的外周延伸并围绕半导体衬底的外周延伸的部分，以使半导体衬底 基板具有刚性。 支撑结构可以被构造为环或作为基本上覆盖半导体衬底的有源表面并且在由有源表面承载的每个半导体器件上形成保护结构的构件。

公开(公告)号：US07531453B2

公开(公告)日：2009-05-12

申请号：US12027106

申请日：2008-02-06

申请人： Kyle K. Kirby ,  Salman Akram ,  David R. Hembree ,  Sidney B. Rigg ,  Warren M. Farnworth ,  William M. Hiatt

发明人： Kyle K. Kirby ,  Salman Akram ,  David R. Hembree ,  Sidney B. Rigg ,  Warren M. Farnworth ,  William M. Hiatt

IPC分类号： H01L21/44

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H05K1/0306 ,  H05K3/4038 ,  H05K3/422 ,  H05K3/423 ,  H05K2201/0305 ,  H05K2201/09827 ,  H05K2203/072 ,  H05K2203/1147 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Microelectronic devices, methods for packaging microelectronic devices, and methods for forming interconnects in microelectronic devices are disclosed herein. In one embodiment, a method comprises providing a microelectronic substrate having a front side and a backside. The substrate has a microelectronic die including an integrated circuit and a terminal operatively coupled to the integrated circuit. The method also includes forming a passage at least partially through the substrate and having an opening at the front side and/or backside of the substrate. The method further includes sealing the opening with a conductive cap that closes one end of the passage while another end of the passage remains open. The method then includes filling the passage with a conductive material.

摘要翻译： 本文公开了微电子器件，用于封装微电子器件的方法，以及用于在微电子器件中形成互连的方法。 在一个实施例中，一种方法包括提供具有正面和背面的微电子衬底。 衬底具有包括集成电路的微电子管芯和可操作地耦合到集成电路的端子。 该方法还包括至少部分地形成通过基底并且在基底的前侧和/或后侧具有开口的通道。 该方法还包括用封闭通道一端的导电盖密封开口，同时通道的另一端保持打开。 该方法然后包括用导电材料填充通道。

公开(公告)号：US07829976B2

公开(公告)日：2010-11-09

申请号：US12419029

申请日：2009-04-06

申请人： Kyle K. Kirby ,  Salman Akram ,  David R. Hembree ,  Sidney B. Rigg ,  Warren M. Farnworth ,  William M. Hiatt

发明人： Kyle K. Kirby ,  Salman Akram ,  David R. Hembree ,  Sidney B. Rigg ,  Warren M. Farnworth ,  William M. Hiatt

IPC分类号： H01L29/40

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H05K1/0306 ,  H05K3/4038 ,  H05K3/422 ,  H05K3/423 ,  H05K2201/0305 ,  H05K2201/09827 ,  H05K2203/072 ,  H05K2203/1147 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Microelectronic devices, methods for packaging microelectronic devices, and methods for forming interconnects in microelectronic devices are disclosed herein. In one embodiment, a method comprises providing a microelectronic substrate having a front side and a backside. The substrate has a microelectronic die including an integrated circuit and a terminal operatively coupled to the integrated circuit. The method also includes forming a passage at least partially through the substrate and having an opening at the front side and/or backside of the substrate. The method further includes sealing the opening with a conductive cap that closes one end of the passage while another end of the passage remains open. The method then includes filling the passage with a conductive material.

摘要翻译： 本文公开了微电子器件，用于封装微电子器件的方法，以及用于在微电子器件中形成互连的方法。 在一个实施例中，一种方法包括提供具有正面和背面的微电子衬底。 衬底具有包括集成电路的微电子管芯和可操作地耦合到集成电路的端子。 该方法还包括至少部分地形成通过基底并且在基底的前侧和/或后侧具有开口的通道。 该方法还包括用封闭通道一端的导电盖密封开口，同时通道的另一端保持打开。 该方法然后包括用导电材料填充通道。

公开(公告)号：US07683458B2

公开(公告)日：2010-03-23

申请号：US11924781

申请日：2007-10-26

申请人： Salman Akram ,  Charles M. Watkins ,  William M. Hiatt ,  David R. Hembree ,  James M. Wark ,  Warren M. Farnworth ,  Mark E. Tuttle ,  Sidney B. Rigg ,  Steven D. Oliver ,  Kyle K. Kirby ,  Alan G. Wood ,  Lu Velicky

发明人： Salman Akram ,  Charles M. Watkins ,  William M. Hiatt ,  David R. Hembree ,  James M. Wark ,  Warren M. Farnworth ,  Mark E. Tuttle ,  Sidney B. Rigg ,  Steven D. Oliver ,  Kyle K. Kirby ,  Alan G. Wood ,  Lu Velicky

IPC分类号： H01L23/485

CPC分类号： H01L21/76877 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/45 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.

摘要翻译： 公开了一种用于成像器，存储器和其他集成电路应用的透晶片互连，从而消除了对引线接合的需要，使得结合这种互连的器件可堆叠并且实现成像器件的晶片级封装。 此外，实现了更小且更可靠的管芯封装，并且由于信号路径长度的减小，电路寄生（例如，L和R）被减小。

公开(公告)号：US20090191701A1

公开(公告)日：2009-07-30

申请号：US12419029

申请日：2009-04-06

申请人： Kyle K. Kirby ,  Salman Akram ,  David R. Hembree ,  Sidney B. Rigg ,  Warren M. Farnworth ,  William M. Hiatt

发明人： Kyle K. Kirby ,  Salman Akram ,  David R. Hembree ,  Sidney B. Rigg ,  Warren M. Farnworth ,  William M. Hiatt

IPC分类号： H01L21/768

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H05K1/0306 ,  H05K3/4038 ,  H05K3/422 ,  H05K3/423 ,  H05K2201/0305 ,  H05K2201/09827 ,  H05K2203/072 ,  H05K2203/1147 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Microelectronic devices, methods for packaging microelectronic devices, and methods for forming interconnects in microelectronic devices are disclosed herein. In one embodiment, a method comprises providing a microelectronic substrate having a front side and a backside. The substrate has a microelectronic die including an integrated circuit and a terminal operatively coupled to the integrated circuit. The method also includes forming a passage at least partially through the substrate and having an opening at the front side and/or backside of the substrate. The method further includes sealing the opening with a conductive cap that closes one end of the passage while another end of the passage remains open. The method then includes filling the passage with a conductive material.

摘要翻译： 本文公开了微电子器件，用于封装微电子器件的方法，以及用于在微电子器件中形成互连的方法。 在一个实施例中，一种方法包括提供具有正面和背面的微电子衬底。 衬底具有包括集成电路的微电子管芯和可操作地耦合到集成电路的端子。 该方法还包括至少部分地形成通过基底并且在基底的前侧和/或后侧具有开口的通道。 该方法还包括用封闭通道一端的导电盖密封开口，同时通道的另一端保持打开。 该方法然后包括用导电材料填充通道。

公开(公告)号：US07329943B2

公开(公告)日：2008-02-12

申请号：US11416824

申请日：2006-05-03

申请人： Kyle K. Kirby ,  Salman Akram ,  David R. Hembree ,  Sidney B. Rigg ,  Warren M. Farnworth ,  William M. Hiatt

发明人： Kyle K. Kirby ,  Salman Akram ,  David R. Hembree ,  Sidney B. Rigg ,  Warren M. Farnworth ,  William M. Hiatt

IPC分类号： H01L29/40

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H05K1/0306 ,  H05K3/4038 ,  H05K3/422 ,  H05K3/423 ,  H05K2201/0305 ,  H05K2201/09827 ,  H05K2203/072 ,  H05K2203/1147 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Microelectronic devices, methods for packaging microelectronic devices, and methods for forming interconnects in microelectronic devices are disclosed herein. In one embodiment, a method comprises providing a microelectronic substrate having a front side and a backside. The substrate has a microelectronic die including an integrated circuit and a terminal operatively coupled to the integrated circuit. The method also includes forming a passage at least partially through the substrate and having an opening at the front side and/or backside of the substrate. The method further includes sealing the opening with a conductive cap that closes one end of the passage while another end of the passage remains open. The method then includes filling the passage with a conductive material.

摘要翻译： 本文公开了微电子器件，用于封装微电子器件的方法，以及用于在微电子器件中形成互连的方法。 在一个实施例中，一种方法包括提供具有正面和背面的微电子衬底。 衬底具有包括集成电路的微电子管芯和可操作地耦合到集成电路的端子。 该方法还包括至少部分地形成通过基底并且在基底的前侧和/或后侧具有开口的通道。 该方法还包括用封闭通道一端的导电盖密封开口，同时通道的另一端保持打开。 该方法然后包括用导电材料填充通道。

公开(公告)号：US07232754B2

公开(公告)日：2007-06-19

申请号：US10879838

申请日：2004-06-29

申请人： Kyle K. Kirby ,  Salman Akram ,  David R. Hembree ,  Sidney B. Rigg ,  Warren M. Farnworth ,  William M. Hiatt

发明人： Kyle K. Kirby ,  Salman Akram ,  David R. Hembree ,  Sidney B. Rigg ,  Warren M. Farnworth ,  William M. Hiatt

IPC分类号： H01L21/44

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H05K1/0306 ,  H05K3/4038 ,  H05K3/422 ,  H05K3/423 ,  H05K2201/0305 ,  H05K2201/09827 ,  H05K2203/072 ,  H05K2203/1147 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Microelectronic devices, methods for packaging microelectronic devices, and methods for forming interconnects in microelectronic devices are disclosed herein. In one embodiment, a method comprises providing a microelectronic substrate having a front side and a backside. The substrate has a microelectronic die including an integrated circuit and a terminal operatively coupled to the integrated circuit. The method also includes forming a passage at least partially through the substrate and having an opening at the front side and/or backside of the substrate. The method further includes sealing the opening with a conductive cap that closes one end of the passage while another end of the passage remains open. The method then includes filling the passage with a conductive material.

摘要翻译： 本文公开了微电子器件，用于封装微电子器件的方法，以及用于在微电子器件中形成互连的方法。 在一个实施例中，一种方法包括提供具有正面和背面的微电子衬底。 衬底具有包括集成电路的微电子管芯和可操作地耦合到集成电路的端子。 该方法还包括至少部分地形成通过基底并且在基底的前侧和/或后侧具有开口的通道。 该方法还包括用封闭通道一端的导电盖密封开口，同时通道的另一端保持打开。 该方法然后包括用导电材料填充通道。

公开(公告)号：US08502353B2

公开(公告)日：2013-08-06

申请号：US13154550

申请日：2011-06-07

申请人： Salman Akram ,  Charles M. Watkins ,  William M. Hiatt ,  David R. Hembree ,  James M. Wark ,  Warren M. Farnworth ,  Mark E. Tuttle ,  Sidney B. Rigg ,  Steven D. Oliver ,  Kyle K. Kirby ,  Alan G. Wood ,  Lu Velicky

发明人： Salman Akram ,  Charles M. Watkins ,  William M. Hiatt ,  David R. Hembree ,  James M. Wark ,  Warren M. Farnworth ,  Mark E. Tuttle ,  Sidney B. Rigg ,  Steven D. Oliver ,  Kyle K. Kirby ,  Alan G. Wood ,  Lu Velicky

IPC分类号： H01L23/485

CPC分类号： H01L21/76877 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/45 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.

摘要翻译： 公开了一种用于成像器，存储器和其他集成电路应用的透晶片互连，从而消除了对引线接合的需要，使得结合这种互连的器件可堆叠并且实现成像器件的晶片级封装。 此外，实现了更小且更可靠的管芯封装，并且由于信号路径长度的减小，电路寄生（例如，L和R）被减小。

公开(公告)号：US07713841B2

公开(公告)日：2010-05-11

申请号：US10666742

申请日：2003-09-19

申请人： Alan G. Wood ,  Warren M. Farnworth ,  David R. Hembree ,  Sidney B. Rigg ,  William M. Hiatt ,  Peter Benson ,  Kyle K. Kirby ,  Salman Akram

发明人： Alan G. Wood ,  Warren M. Farnworth ,  David R. Hembree ,  Sidney B. Rigg ,  William M. Hiatt ,  Peter Benson ,  Kyle K. Kirby ,  Salman Akram

IPC分类号： H01L21/46

CPC分类号： G03F7/0037 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y80/00 ,  G03F7/0047

摘要： A support structure for use with a semiconductor substrate in thinning, or backgrinding, thereof, as well as during post-thinning processing of the semiconductor substrate includes a portion which extends substantially along and around an outer periphery of the semiconductor substrate to impart the thinned semiconductor substrate with rigidity. The support structure may be configured as a ring or as a member which substantially covers an active surface of the semiconductor substrate and forms a protective structure over each semiconductor device carried by the active surface. Assemblies that include the support structure and a semiconductor substrate are also within the scope of the present invention, as are methods for forming the support structures and thinning and post-thinning processes that include use of the support structures.

摘要翻译： 在半导体衬底的薄化或后研磨以及后稀化处理期间与半导体衬底一起使用的支撑结构包括基本上沿半导体衬底的外周延伸并且围绕半导体衬底的外周延伸的部分，以使薄化半导体 基板具有刚性。 支撑结构可以被配置为环或作为基本上覆盖半导体衬底的有源表面并且在由有源表面承载的每个半导体器件上形成保护结构的构件。 包括支撑结构和半导体衬底的组件也在本发明的范围内，形成支撑结构的方法和包括使用支撑结构的减薄和后变薄工艺也是如此。