发明授权
- 专利标题: Electrodes located at storage capacitor wiring in active matrix substrate
- 专利标题(中): 电极位于有源矩阵基板的存储电容布线
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申请号: US12193513申请日: 2008-08-18
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公开(公告)号: US07830467B2公开(公告)日: 2010-11-09
- 发明人: Toshifumi Yagi , Toshihide Tsubata , Masanori Takeuchi , Yuhko Hisada
- 申请人: Toshifumi Yagi , Toshihide Tsubata , Masanori Takeuchi , Yuhko Hisada
- 申请人地址: JP Osaka-shi
- 专利权人: Sharp Kabushiki Kaisha
- 当前专利权人: Sharp Kabushiki Kaisha
- 当前专利权人地址: JP Osaka-shi
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 优先权: JP2004-020488 20040128; JP2004-349590 20041202
- 主分类号: G02F1/1343
- IPC分类号: G02F1/1343 ; G02F1/1333
摘要:
An active matrix substrate includes a thin film transistor, a scanning signal line, and a data signal line disposed on the substrate. A gate electrode of the transistor is connected to the scanning signal line, a source electrode thereof is connected to the data signal line, and a drain electrode thereof is connected to a pixel electrode; and an upper electrode is disposed so as to oppose a storage capacitor wiring pattern at least via an insulating layer. Within a pixel region, the upper electrode includes three divided electrodes in a region opposing the storage capacitor wiring pattern, and a central divided electrode of the three divided electrodes has the smallest area.
公开/授权文献
- US20080309841A1 ACTIVE MATRIX SUBSTRATE AND DISPLAY DEVICE 公开/授权日:2008-12-18
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