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1.发明授权公开(公告)号：US07830467B2
公开(公告)日：2010-11-09
申请号：US12193513
申请日：2008-08-18
IPC分类号： G02F1/1343 , G02F1/1333
CPC分类号： G02F1/136259 , G02F2001/136263 , H01L27/124 , H01L27/1255
摘要： An active matrix substrate includes a thin film transistor, a scanning signal line, and a data signal line disposed on the substrate. A gate electrode of the transistor is connected to the scanning signal line, a source electrode thereof is connected to the data signal line, and a drain electrode thereof is connected to a pixel electrode; and an upper electrode is disposed so as to oppose a storage capacitor wiring pattern at least via an insulating layer. Within a pixel region, the upper electrode includes three divided electrodes in a region opposing the storage capacitor wiring pattern, and a central divided electrode of the three divided electrodes has the smallest area.
摘要翻译： 有源矩阵基板包括薄膜晶体管，扫描信号线和设置在基板上的数据信号线。 晶体管的栅电极连接到扫描信号线，其源电极连接到数据信号线，其漏电极连接到像素电极; 并且上电极至少经由绝缘层设置成与辅助电容布线图形相对。 在像素区域内，上部电极在与保持电容布线图案相对的区域中具有三个分割电极，三个分割电极的中央分割电极面积最小。
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公开(公告)号：US07430024B2
公开(公告)日：2008-09-30
申请号：US11041361
申请日：2005-01-25
IPC分类号： G02F1/133
CPC分类号： G02F1/136259 , G02F2001/136263 , H01L27/124 , H01L27/1255
摘要： An active matrix substrate includes a thin film transistor disposed at the crossing point of a scanning signal line with a data signal line on the substrate, with a gate electrode of the transistor being connected to the scanning signal line, a source electrode thereof being connected to the data signal line and a drain electrode thereof being connected to an interconnection electrode, and a storage capacitor upper electrode disposed so as to oppose a storage capacitor wiring pattern at least via an insulating layer and connected to the interconnection electrode and a pixel electrode. The storage capacitor upper electrode includes at least three divided electrodes in the region opposing the storage capacitor wiring pattern.
摘要翻译： 有源矩阵基板包括设置在扫描信号线与基板上的数据信号线的交点处的薄膜晶体管，晶体管的栅电极连接到扫描信号线，其源电极连接到 数据信号线及其漏电极连接到互连电极，以及存储电容器上电极，至少经由绝缘层与辅助电容布线图案相对设置并连接到互连电极和像素电极。 存储电容器上电极在与保持电容布线图案相对的区域中至少包含三个分割电极。
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公开(公告)号：US20050162893A1
公开(公告)日：2005-07-28
申请号：US11041361
申请日：2005-01-25
IPC分类号： G02F1/1368 , G02F1/133 , G02F1/136 , G02F1/1362 , G11C11/24 , H01L21/77 , H01L27/12 , H01L27/13 , H01L29/786
CPC分类号： G02F1/136259 , G02F2001/136263 , H01L27/124 , H01L27/1255
摘要： The active matrix substrate of the present invention is the active matrix substrate in which the faulty connection in a storage capacitor element as caused by a short circuit between storage capacitor electrodes due to a conductive foreign material or a pinhole in an insulating layer or by a short circuit between a data signal line and a storage capacitor upper electrode can be repaired with ease. The active matrix substrate of the present invention is the active matrix substrate comprising a thin film transistor disposed at the crossing point of a scanning signal line with a data signal line on the substrate, with a gate electrode of the transistor being connected to the scanning signal line, a source electrode thereof being connected to the data signal line and a drain electrode thereof being connected to an interconnection electrode, and a storage capacitor upper electrode disposed so as to oppose a storage capacitor wiring pattern at least via an insulating layer and connected to the interconnection electrode and a pixel electrode, wherein the storage capacitor upper electrode comprises at least three divided electrodes in the region opposing the storage capacitor wiring pattern.
摘要翻译： 本发明的有源矩阵基板是有源矩阵基板，其中由于导电异物或绝缘层中的针孔或由短路引起的存储电容器电极之间的短路而导致的存储电容器元件中的故障连接 可以容易地修复数据信号线和存储电容器上电极之间的电路。 本发明的有源矩阵基板是有源矩阵基板，包括设置在扫描信号线与基板上的数据信号线的交叉点的薄膜晶体管，晶体管的栅电极连接到扫描信号 线，其源电极连接到数据信号线，其漏电极连接到互连电极，以及存储电容器上电极，至少经由绝缘层与辅助电容布线图案相对设置，并且连接到 互连电极和像素电极，其中所述存储电容器上电极在与所述辅助电容器布线图案相对的区域中包括至少三个分割电极。
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4.发明授权Active matrix substrate, method for correcting a pixel deffect therein and manufacturing method thereof 有权有源矩阵基板，用于校正像素影响的方法及其制造方法公开(公告)号：US07973871B2
公开(公告)日：2011-07-05
申请号：US11597432
申请日：2005-05-27
IPC分类号： G02F1/1333 , G02F1/1343 , G02F1/13 , H01J9/24
CPC分类号： G02F1/136259 , G02F1/136213 , G02F2001/136268 , H01L27/124
摘要： The present invention provides an active matrix substrate of comprising on the substrate: a plurality of scanning signal lines and data signal lines; a thin film transistor provided at an intersecting point of the signal lines and comprising a gate electrode connected to the scanning signal line, a source electrode connected to the data signal line; and a pixel electrode electrically connected to a drain electrode of the thin film transistor, wherein the active matrix substrate comprises a structure having an at least partly multilinear data signal line and an interconnection electrode for correction.
摘要翻译： 本发明提供一种有源矩阵基板，包括：多个扫描信号线和数据信号线; 设置在所述信号线的交点处的薄膜晶体管，并且包括连接到所述扫描信号线的栅电极，连接到所述数据信号线的源电极; 以及电连接到所述薄膜晶体管的漏电极的像素电极，其中所述有源矩阵基板包括具有至少部分多线数据信号线和用于校正的互连电极的结构。
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公开(公告)号：US07768584B2
公开(公告)日：2010-08-03
申请号：US12382799
申请日：2009-03-24
IPC分类号： G02F1/1343
CPC分类号： G02F1/136213 , G02F1/136259
摘要： An active matrix substrate includes a substrate, a TFT formed on the substrate, a storage capacitor element formed on the substrate, an interlayer insulating film covering the storage capacitor element, and a pixel electrode formed on the interlayer insulating film. The storage capacitor element includes a storage capacitor line, an insulating film formed on the storage capacitor line, and two or more storage capacitor electrodes opposed to the storage capacitor line with the insulating film interposed therebetween. The two or more storage capacitor electrodes are electrically connected via associated contact holes formed in the interlayer insulating film to the pixel electrode and electrically continuous with a drain electrode of the TFT.
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6.发明授权Active matrix substrate, method for fabricating active matrix substrate, display device, liquid crystal display device, and television device 有权有源矩阵基板，有源矩阵基板的制造方法，显示装置，液晶显示装置以及电视装置公开(公告)号：US07714948B2
公开(公告)日：2010-05-11
申请号：US11792563
申请日：2005-12-14
IPC分类号： G02F1/1343
CPC分类号： G02F1/136213 , G02F1/136259
摘要： An active matrix substrate includes a substrate, a TFT formed on the substrate, a storage capacitor element formed on the substrate, an interlayer insulating film covering the storage capacitor element, and a pixel electrode formed on the interlayer insulating film. The storage capacitor element includes a storage capacitor line, an insulating film formed on the storage capacitor line, and two or more storage capacitor electrodes opposed to the storage capacitor line with the insulating film interposed therebetween. The two or more storage capacitor electrodes are electrically connected via associated contact holes formed in the interlayer insulating film to the pixel electrode and electrically continuous with a drain electrode of the TFT.
摘要翻译： 有源矩阵基板包括基板，形成在基板上的TFT，形成在基板上的辅助电容器元件，覆盖保持电容元件的层间绝缘膜，以及形成在层间绝缘膜上的像素电极。 存储电容器元件包括辅助电容线，形成在辅助电容线上的绝缘膜和与辅助电容线相对的两个或更多个保持电容电极，绝缘膜夹在它们之间。 两个以上的保持电容电极通过形成在层间绝缘膜中的相关联的接触孔电连接到像素电极，并与TFT的漏极电连接。
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7.发明申请Active Matrix Substrate, Method for Fabricating Active Matrix Substrate, Display Device, Liquid Crystal Display Device, and Television Device 有权主动矩阵基板，制造有源矩阵基板的方法，显示装置，液晶显示装置和电视装置公开(公告)号：US20080002076A1
公开(公告)日：2008-01-03
申请号：US11792563
申请日：2005-12-14
IPC分类号： G02F1/1343 , H01L21/84
CPC分类号： G02F1/136213 , G02F1/136259
摘要： An active matrix substrate includes a substrate, a TFT formed on the substrate, a storage capacitor element formed on the substrate, an interlayer insulating film covering the storage capacitor element, and a pixel electrode formed on the interlayer insulating film. The storage capacitor element includes a storage capacitor line, an insulating film formed on the storage capacitor line, and two or more storage capacitor electrodes opposed to the storage capacitor line with the insulating film interposed therebetween. The two or more storage capacitor electrodes are electrically connected via associated contact holes formed in the interlayer insulating film to the pixel electrode and electrically continuous with a drain electrode of the TFT.
摘要翻译： 有源矩阵基板包括基板，形成在基板上的TFT，形成在基板上的辅助电容器元件，覆盖保持电容元件的层间绝缘膜，以及形成在层间绝缘膜上的像素电极。 存储电容器元件包括辅助电容线，形成在辅助电容线上的绝缘膜和与辅助电容线相对的两个或更多个保持电容电极，绝缘膜夹在它们之间。 两个以上的保持电容电极通过形成在层间绝缘膜中的相关联的接触孔电连接到像素电极，并与TFT的漏极电连接。
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8.发明申请Active matrix substrate, method for fabricating active matrix substrate, display device, liquid crystal display device, and television device 有权有源矩阵基板，有源矩阵基板的制造方法，显示装置，液晶显示装置以及电视装置公开(公告)号：US20090225247A1
公开(公告)日：2009-09-10
申请号：US12382799
申请日：2009-03-24
IPC分类号： G02F1/1343
CPC分类号： G02F1/136213 , G02F1/136259
摘要： An active matrix substrate includes a substrate, a TFT formed on the substrate, a storage capacitor element formed on the substrate, an interlayer insulating film covering the storage capacitor element, and a pixel electrode formed on the interlayer insulating film. The storage capacitor element includes a storage capacitor line, an insulating film formed on the storage capacitor line, and two or more storage capacitor electrodes opposed to the storage capacitor line with the insulating film interposed therebetween. The two or more storage capacitor electrodes are electrically connected via associated contact holes formed in the interlayer insulating film to the pixel electrode and electrically continuous with a drain electrode of the TFT.
摘要翻译： 有源矩阵基板包括基板，形成在基板上的TFT，形成在基板上的辅助电容器元件，覆盖保持电容元件的层间绝缘膜，以及形成在层间绝缘膜上的像素电极。 存储电容器元件包括辅助电容线，形成在辅助电容线上的绝缘膜和与辅助电容线相对的两个或更多个保持电容电极，绝缘膜夹在它们之间。 两个以上的保持电容电极通过形成在层间绝缘膜中的相关联的接触孔电连接到像素电极，并与TFT的漏极电连接。
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9.发明授权Active matrix substrate, method for fabricating active matrix substrate, display device, liquid crystal display device, and television device 有权有源矩阵基板，有源矩阵基板的制造方法，显示装置，液晶显示装置以及电视装置公开(公告)号：US08089571B2
公开(公告)日：2012-01-03
申请号：US12458215
申请日：2009-07-02
IPC分类号： G02F1/1343
CPC分类号： G02F1/136213 , G02F1/136259
摘要： An active matrix substrate (12) includes a substrate, a TFT (24) formed on the substrate, a storage capacitor element (20) formed on the substrate, an interlayer insulating film covering the storage capacitor element (20), and a pixel electrode (21) formed on the interlayer insulating film. The storage capacitor element (20) includes a storage capacitor line (27), an insulating film formed on the storage capacitor line (27), and two or more storage capacitor electrodes (25a, 25b, 25c) opposed to the storage capacitor line (27) with the insulating film interposed therebetween. The two or more storage capacitor electrodes (25a, 25b, 25c) are electrically connected via associated contact holes (26a, 26b, 26c) formed in the interlayer insulating film to the pixel electrode (21) and electrically continuous with a drain electrode of the TFT (24).
摘要翻译： 有源矩阵基板（12）包括基板，形成在基板上的TFT（24），形成在基板上的辅助电容元件（20），覆盖该保持电容元件（20）的层间绝缘膜，以及像素电极 （21）形成在层间绝缘膜上。 存储电容器元件（20）包括辅助电容线（27），形成在辅助电容线（27）上的绝缘膜和与辅助电容线相对的两个或更多个保持电容电极（25a，25b，25c） 27），其间插入绝缘膜。 两个以上的保持电容电极（25a，25b，25c）通过形成在层间绝缘膜中的相关接触孔（26a，26b，26c）与像素电极（21）电连接，并与 TFT（24）。
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10.发明申请Active matrix substrate, method for fabricating active matrix substrate, display device, liquid crystal display device, and television device 有权有源矩阵基板，有源矩阵基板的制造方法，显示装置，液晶显示装置以及电视装置公开(公告)号：US20090268116A1
公开(公告)日：2009-10-29
申请号：US12458215
申请日：2009-07-02
IPC分类号： G02F1/1343
CPC分类号： G02F1/136213 , G02F1/136259
摘要： An active matrix substrate (12) includes a substrate, a TFT (24) formed on the substrate, a storage capacitor element (20) formed on the substrate, an interlayer insulating film covering the storage capacitor element (20), and a pixel electrode (21) formed on the interlayer insulating film. The storage capacitor element (20) includes a storage capacitor line (27), an insulating film formed on the storage capacitor line (27), and two or more storage capacitor electrodes (25a, 25b, 25c) opposed to the storage capacitor line (27) with the insulating film interposed therebetween. The two or more storage capacitor electrodes (25a, 25b, 25c) are electrically connected via associated contact holes (26a, 26b, 26c) formed in the interlayer insulating film to the pixel electrode (21) and electrically continuous with a drain electrode of the TFT (24).
摘要翻译： 有源矩阵基板（12）包括基板，形成在基板上的TFT（24），形成在基板上的辅助电容元件（20），覆盖该保持电容元件（20）的层间绝缘膜，以及像素电极 （21）形成在层间绝缘膜上。 存储电容器元件（20）包括辅助电容线（27），形成在辅助电容线（27）上的绝缘膜和与辅助电容线相对的两个或更多个保持电容电极（25a，25b，25c） 27），其间插入绝缘膜。 两个以上的保持电容电极（25a，25b，25c）通过形成在层间绝缘膜中的相关接触孔（26a，26b，26c）与像素电极（21）电连接，并与 TFT（24）。
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