Invention Grant
US07830742B2 Semiconductor memory device and memory cell accessing method thereof
有权
半导体存储器件及其存储单元访问方法
- Patent Title: Semiconductor memory device and memory cell accessing method thereof
- Patent Title (中): 半导体存储器件及其存储单元访问方法
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Application No.: US12007855Application Date: 2008-01-16
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Publication No.: US07830742B2Publication Date: 2010-11-09
- Inventor: Yong-Joo Han
- Applicant: Yong-Joo Han
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2007-0008029 20070125
- Main IPC: G11C8/00
- IPC: G11C8/00
Abstract:
A memory cell accessing method may include receiving an input address, determining whether the input address has been accessed at least a predetermined number of times, and converting a memory cell enabled by the input address when it is determined that the input address has been accessed the predetermined number of times or more.
Public/Granted literature
- US20080181048A1 Semiconductor memory device and memory cell accessing method thereof Public/Granted day:2008-07-31
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