Abstract:
A memory cell accessing method may include receiving an input address, determining whether the input address has been accessed at least a predetermined number of times, and converting a memory cell enabled by the input address when it is determined that the input address has been accessed the predetermined number of times or more.
Abstract:
A decoder, a memory system, and a physical position converting method thereof may detect whether an address count of an input address is equal to or greater than a predetermined value. A physical position of a semiconductor memory device corresponding to the input address may be converted if the address count is equal to or greater than the predetermined value.
Abstract:
A decoder, a memory system, and a physical position converting method thereof may detect whether an address count of an input address is equal to or greater than a predetermined value. A physical position of a semiconductor memory device corresponding to the input address may be converted if the address count is equal to or greater than the predetermined value.
Abstract:
A memory cell accessing method may include receiving an input address, determining whether the input address has been accessed at least a predetermined number of times, and converting a memory cell enabled by the input address when it is determined that the input address has been accessed the predetermined number of times or more.
Abstract:
A power supply arrangement for a semiconductor chip includes, in a first preferred embodiment, a power supply voltage line, a ground voltage line, an intermediate voltage line, a plurality of first noise reduction capacitors connected between the intermediate voltage line and the power supply voltage line, and a plurality of second noise reduction capacitors connected between the intermediate voltage line and the ground voltage line. In a second preferred embodiment, the power supply arrangement includes a power supply voltage line, a ground voltage line, a quiet power supply voltage line, a quiet ground voltage line, a plurality of first noise reduction capacitors connected between the power supply voltage line and the quiet ground voltage line, and a plurality of second noise reduction capacitors connected between the ground voltage line and the quiet power supply voltage line.