发明授权
- 专利标题: Capacitor device and method of manufacturing the same
- 专利标题(中): 电容器及其制造方法
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申请号: US11790732申请日: 2007-04-27
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公开(公告)号: US07832069B2公开(公告)日: 2010-11-16
- 发明人: Takeshi Shioga , John David Baniecki , Kazuaki Kurihara
- 申请人: Takeshi Shioga , John David Baniecki , Kazuaki Kurihara
- 申请人地址: JP Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JP Kawasaki
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP
- 主分类号: H01G7/00
- IPC分类号: H01G7/00
摘要:
A capacitor device includes a capacitor Q constituted by a lower electrode (12) formed on a substrate (10), a dielectric film (14), and an upper electrode (16); an insulating film (18) covering the capacitor Q; a first contact hole (18a) formed in the insulating film (18) on a connection portion (16a) of the upper electrode (16); an electrode pad (20) for preventing a diffusion of solder, formed in the first contact hole (18a); and a solder bump (22) electrically connected to the electrode pad (20), and the upper electrode (16) has a protrusion portion (16a) protruding from the dielectric film (14), and is connected to the first contact hole (18a) on the protrusion portion (16a).
公开/授权文献
- US20090007405A1 Capacitor device and method of manufacturing the same 公开/授权日:2009-01-08
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