Thin film capacitor and fabrication method thereof
    6.
    发明申请
    Thin film capacitor and fabrication method thereof 有权
    薄膜电容器及其制造方法

    公开(公告)号:US20080305607A1

    公开(公告)日:2008-12-11

    申请号:US12219577

    申请日:2008-07-24

    IPC分类号: H01L21/20

    摘要: A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1

    摘要翻译: 一种薄膜电容器,包括保持在顶部和底部电极之间的顶部电极,底部电极和电介质膜。 电介质膜至少由阳离子Ba,Sr,Ti和阴离子O组成。Sr,Ti和O离子的浓度沿着电介质膜的生长方向是均匀的,而Ba阳离子的浓度是不均匀的 沿着生长方向,使得其中钙钛矿型Ba阳离子(Ba-I)的平均浓度小于非钙钛矿型Ba阳离子(Ba-II)的平均浓度的还原Ba-I区域存在于或接近 比例R =(atm%Ba-I)/ [(atm%Ba-I)+(atm%Ba-II)]在顶部和底部电极中的至少一个之间的边界在0.1

    Thin film capacitor and fabrication method thereof
    7.
    发明申请
    Thin film capacitor and fabrication method thereof 有权
    薄膜电容器及其制造方法

    公开(公告)号:US20070232017A1

    公开(公告)日:2007-10-04

    申请号:US11582480

    申请日:2006-10-18

    IPC分类号: H01L21/20

    摘要: A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1

    摘要翻译: 一种薄膜电容器,包括保持在顶部和底部电极之间的顶部电极,底部电极和电介质膜。 电介质膜至少由阳离子Ba,Sr,Ti和阴离子O组成。Sr,Ti和O离子的浓度沿着电介质膜的生长方向是均匀的,而Ba阳离子的浓度是不均匀的 沿着生长方向,使得其中钙钛矿型Ba阳离子(Ba-I)的平均浓度小于非钙钛矿型Ba阳离子(Ba-II)的平均浓度的还原Ba-I区域存在于或接近 比例R =(atm%Ba-I)/ [(atm%Ba-I)+(atm%Ba-II)]在顶部和底部电极中的至少一个之间的边界在0.1

    Laminated thin-film device, manufacturing method thereof, and circuit
    9.
    发明授权
    Laminated thin-film device, manufacturing method thereof, and circuit 有权
    层压薄膜器件及其制造方法和电路

    公开(公告)号:US08344386B2

    公开(公告)日:2013-01-01

    申请号:US12926733

    申请日:2010-12-07

    IPC分类号: H01L29/00

    CPC分类号: H01L28/55

    摘要: The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.

    摘要翻译: 本发明提供了一种新颖的电容器元件,层叠薄膜器件以及可以适当地调节电容对电压的依赖性的电路,以及用于制造这种电容器元件和层叠薄膜器件的技术。 在包括一对电极层和设置在电极层之间的电介质层的电容器元件中,在电介质层中设置注入离子的阱区,电极层之间的CV曲线偏移或偏移 在相对于电压轴的正方向和负方向的至少一个方向上。