发明授权
- 专利标题： Method of forming a field effect transistor
- 专利标题（中）： 形成场效应晶体管的方法
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申请号： US11704488申请日： 2007-02-09
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公开(公告)号： US07833892B2公开(公告)日： 2010-11-16
- 发明人: Kunal R. Parekh , John K. Zahurak
- 申请人： Kunal R. Parekh , John K. Zahurak
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/4763 ; H01L21/44 ; H01L21/336
摘要：
The invention includes methods of forming integrated circuitry, methods of forming memory circuitry, and methods of forming field effect transistors. In one implementation, conductive metal silicide is formed on some areas of a substrate and not on others. In one implementation, conductive metal silicide is formed on a transistor source/drain region and which is spaced from an anisotropically etched sidewall spacer proximate a gate of the transistor.
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