发明授权
US07834366B2 Semiconductor device having a group III nitride semiconductor layer
有权
具有III族氮化物半导体层的半导体器件
- 专利标题： Semiconductor device having a group III nitride semiconductor layer
- 专利标题（中）： 具有III族氮化物半导体层的半导体器件
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申请号： US11491261申请日： 2006-07-24
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公开(公告)号： US07834366B2公开(公告)日： 2010-11-16
- 发明人: Hisashi Nakayama , Tetsuzo Ueda , Masaaki Yuri
- 申请人： Hisashi Nakayama , Tetsuzo Ueda , Masaaki Yuri
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2003-082422 20030325
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A semiconductor device has a substrate, a first Group III nitride semiconductor layer formed on the substrate, a first oxide layer formed in proximity to the upper portions of defects present in the first Group III nitride semiconductor layer, and a second Group III nitride semiconductor layer including a positive layer and formed over each of the first Group III nitride semiconductor layer and the first oxide layer.
公开/授权文献
- US20060255350A1 Semiconductor device and method for fabricating the same 公开/授权日：2006-11-16
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