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公开(公告)号：US07433380B2
公开(公告)日：2008-10-07
申请号：US11510638
申请日：2006-08-28
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/0658 , H01S5/209 , H01S5/2219 , H01S5/3202 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
摘要翻译： 在半导体激光器件中，将发射不同波长的光的多个发光元件集成在基板上。 每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。 设置在有源层顶部的包层之一是具有台面脊部的上包层。 用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。 蚀刻阻挡层的厚度在发光元件之间变化。
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公开(公告)号：US07713812B2
公开(公告)日：2010-05-11
申请号：US11330213
申请日：2006-01-12
申请人： Tetsuzo Ueda , Hisashi Nakayama , Masaaki Yuri
发明人： Tetsuzo Ueda , Hisashi Nakayama , Masaaki Yuri
IPC分类号： H01L21/00
CPC分类号： H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/02532 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/76251
摘要： A substrate with a second semiconductor layer and a second mask film formed thereon is subjected to a heat treatment in an oxidizing atmosphere. Thus, second oxidized regions are formed through oxidization of the second semiconductor layer in regions of the second semiconductor layer that are not covered by the second mask film. At the same time, a second base layer is formed in each region that is interposed by the second oxidized regions. Then, the second mask film is removed, and a third semiconductor layer is selectively grown on the surface of the second base layer that is exposed between the second oxidized regions so as to cover the second oxidized regions, after which the first oxidized regions and the second oxidized regions covering the entire upper surface of the substrate are removed.
摘要翻译： 在其上形成有第二半导体层和第二掩模膜的衬底在氧化气氛中进行热处理。 因此，通过在第二半导体层的未被第二掩模膜覆盖的区域中氧化第二半导体层来形成第二氧化区。 同时，在由第二氧化区插入的每个区域中形成第二基层。 然后，去除第二掩模膜，并且在暴露在第二氧化区域之间的第二基底层的表面上选择性地生长第三半导体层以覆盖第二氧化区域，之后第一氧化区域和 去除覆盖基板的整个上表面的第二氧化区域。
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公开(公告)号：US20090017570A1
公开(公告)日：2009-01-15
申请号：US12208833
申请日：2008-09-11
IPC分类号： H01L21/02
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/0658 , H01S5/209 , H01S5/2219 , H01S5/3202 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
摘要翻译： 在半导体激光器件中，将发射不同波长的光的多个发光元件集成在基板上。 每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。 设置在有源层顶部的包层之一是具有台面脊部的上包层。 用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。 蚀刻阻挡层的厚度在发光元件之间变化。
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公开(公告)号：US20070223550A1
公开(公告)日：2007-09-27
申请号：US11727229
申请日：2007-03-26
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0021 , H01S5/2206 , H01S5/3201 , H01S5/3211 , H01S5/34326 , H01S2301/173
摘要： A semiconductor laser device has a multilayer structure including a first clad layer, an active layer, and a second clad layer stacked successively on a semiconductor substrate in order of increasing distance from the semiconductor substrate. At least one of the first clad layer and the second clad layer has a compressive distortion with respect to the semiconductor substrate. At least one of the first clad layer and the second clad layer includes a semiconductor layer having a tensile distortion with respect to the semiconductor substrate.
摘要翻译： 半导体激光器件具有多层结构，其包括依次在半导体衬底上堆叠的第一覆盖层，有源层和第二覆盖层，以便与半导体衬底的距离增加。 第一覆盖层和第二覆盖层中的至少一个相对于半导体基板具有压缩变形。 第一覆盖层和第二覆盖层中的至少一个包括相对于半导体基板具有拉伸变形的半导体层。
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公开(公告)号：US07091524B2
公开(公告)日：2006-08-15
申请号：US10808396
申请日：2004-03-25
申请人： Hisashi Nakayama , Tetsuzo Ueda , Masaaki Yuri
发明人： Hisashi Nakayama , Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/0254 , H01L29/2003 , H01L29/32 , H01L29/66462 , H01L29/802 , H01L33/007
摘要： A semiconductor device has a substrate, a first Group III nitride semiconductor layer formed on the substrate, a first oxide layer formed in proximity to the upper portions of defects present in the first Group III nitride semiconductor layer, and a second Group III nitride semiconductor layer including a positive layer and formed over each of the first Group III nitride semiconductor layer and the first oxide layer.
摘要翻译： 半导体器件具有衬底，形成在衬底上的第一III族氮化物半导体层，在第一III族氮化物半导体层中存在的缺陷的上部附近形成的第一氧化物层和第二III族氮化物半导体层 包括正层，并且形成在第一III族氮化物半导体层和第一氧化物层的每一个上。
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公开(公告)号：US20050029531A1
公开(公告)日：2005-02-10
申请号：US10912142
申请日：2004-08-06
CPC分类号： H01L33/08
摘要： A semiconductor device, which includes an active layer made of a first semiconductor layer formed on a substrate, is designed so that a first oxidized area made of an oxide layer is formed on the active layer.
摘要翻译： 包括由形成在基板上的第一半导体层构成的有源层的半导体器件被设计成使得在有源层上形成由氧化物层形成的第一氧化区域。
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公开(公告)号：US07834366B2
公开(公告)日：2010-11-16
申请号：US11491261
申请日：2006-07-24
申请人： Hisashi Nakayama , Tetsuzo Ueda , Masaaki Yuri
发明人： Hisashi Nakayama , Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/0254 , H01L29/2003 , H01L29/32 , H01L29/66462 , H01L29/802 , H01L33/007
摘要： A semiconductor device has a substrate, a first Group III nitride semiconductor layer formed on the substrate, a first oxide layer formed in proximity to the upper portions of defects present in the first Group III nitride semiconductor layer, and a second Group III nitride semiconductor layer including a positive layer and formed over each of the first Group III nitride semiconductor layer and the first oxide layer.
摘要翻译： 半导体器件具有衬底，形成在衬底上的第一III族氮化物半导体层，在第一III族氮化物半导体层中存在的缺陷的上部附近形成的第一氧化物层和第二III族氮化物半导体层 包括正层，并且形成在第一III族氮化物半导体层和第一氧化物层的每一个上。
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公开(公告)号：US07704759B2
公开(公告)日：2010-04-27
申请号：US12208833
申请日：2008-09-11
IPC分类号： H01L21/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/0658 , H01S5/209 , H01S5/2219 , H01S5/3202 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
摘要翻译： 在半导体激光器件中，将发射不同波长的光的多个发光元件集成在基板上。 每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。 设置在有源层顶部的包层之一是具有台面脊部的上包层。 用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。 蚀刻阻挡层的厚度在发光元件之间变化。
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9.发明授权Semiconductor device with oxidized regions and method for fabricating the same 有权具有氧化区域的半导体器件及其制造方法公开(公告)号：US07795630B2
公开(公告)日：2010-09-14
申请号：US10912142
申请日：2004-08-06
IPC分类号： H01L33/00
CPC分类号： H01L33/08
摘要： A semiconductor device, which includes an active layer made of a first semiconductor layer formed on a substrate, is designed so that a first oxidized area made of an oxide layer is formed on the active layer. The first oxidized area further aids in reducing a reactive current so that it becomes possible to achieve a semiconductor device having superior device characteristics.
摘要翻译： 包括由形成在基板上的第一半导体层构成的有源层的半导体器件被设计成使得在有源层上形成由氧化物层形成的第一氧化区域。 第一氧化区进一步有助于降低无功电流，使得可以实现具有优异的器件特性的半导体器件。
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公开(公告)号：US20070147457A1
公开(公告)日：2007-06-28
申请号：US11510638
申请日：2006-08-28
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/0658 , H01S5/209 , H01S5/2219 , H01S5/3202 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
摘要翻译： 在半导体激光器件中，将发射不同波长的光的多个发光元件集成在基板上。 每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。 设置在有源层顶部的包层之一是具有台面脊部的上包层。 用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。 蚀刻阻挡层的厚度在发光元件之间变化。
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