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发明授权
US07834438B2 Sealed structure and method of fabricating sealed structure and semiconductor device and method of fabricating semiconductor device 有权
密封结构和密封结构的制造方法及半导体器件及其制造方法

Sealed structure and method of fabricating sealed structure and semiconductor device and method of fabricating semiconductor device
摘要：
According to a sealed structure 60 constituted by anodically bonding a silicon board 20 and a glass plate 40, an upper opening of a recessed portion 22 is sealed in an airtight state by the glass plate 40 by bonding an upper face of a wall portion 26 to the glass plate 40. A voltage applying pattern 70 is formed to surround a light transmitting region to which an optical conversion element 24 is opposed. Further, the voltage applying pattern 70 functions as a cathode pattern applied with a voltage by being brought into contact with a lower face of the cathode plate 50.
摘要（中）：

根据通过阳极结合硅板20和玻璃板40构成的密封结构60，通过将壁部26的上表面粘接到玻璃板40的密封状态，将凹部22的上部开口密封在气密状态 玻璃板40.形成电压施加图案70以包围光转换元件24相对的光透射区域。 此外，电压施加图案70通过与阴极板50的下表面接触而用作施加电压的阴极图案。

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