发明授权
US07834648B1 Controlling temperature in a semiconductor device 有权
控制半导体器件的温度

Controlling temperature in a semiconductor device
摘要:
Systems and methods for reducing temperature dissipation during burn-in testing are described. Devices under test are each subject to a body bias voltage. The body bias voltage can be used to control junction temperature (e.g., temperature measured at the device under test). The body bias voltage applied to each device under test can be adjusted device-by-device to achieve essentially the same junction temperature at each device.
信息查询
0/0