发明授权
- 专利标题: Controlling temperature in a semiconductor device
- 专利标题(中): 控制半导体器件的温度
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申请号: US12330324申请日: 2008-12-08
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公开(公告)号: US07834648B1公开(公告)日: 2010-11-16
- 发明人: Eric Chen-Li Sheng , David H. Hoffman , John Laurence Niven
- 申请人: Eric Chen-Li Sheng , David H. Hoffman , John Laurence Niven
- 主分类号: G01R31/02
- IPC分类号: G01R31/02
摘要:
Systems and methods for reducing temperature dissipation during burn-in testing are described. Devices under test are each subject to a body bias voltage. The body bias voltage can be used to control junction temperature (e.g., temperature measured at the device under test). The body bias voltage applied to each device under test can be adjusted device-by-device to achieve essentially the same junction temperature at each device.
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