Invention Grant
- Patent Title: Magnetic domain data storage devices and methods of operating the same
- Patent Title (中): 磁畴数据存储设备及其操作方法
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Application No.: US11980418Application Date: 2007-10-31
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Publication No.: US07835167B2Publication Date: 2010-11-16
- Inventor: Chee-kheng Lim , In-kyeong Yoo , Sung-hoon Choa
- Applicant: Chee-kheng Lim , In-kyeong Yoo , Sung-hoon Choa
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0123383 20061206
- Main IPC: G11C19/00
- IPC: G11C19/00 ; G11C11/00 ; G11C11/14 ; G11C11/15

Abstract:
Example embodiments may provide data storage devices using movement of a magnetic domain wall and/or a method of operating magnetic domain data storage devices. The data storage device may include a first magnetic layer for writing data having two magnetic domains magnetized in different directions, a second magnetic layer for storing data at a side of the first magnetic layer, a data recording device connected to the first magnetic layer and the second magnetic layer, and a plurality of reading heads configured to read the second magnetic layer. The data storage device may store a larger amount of data without requiring moving mechanical systems.
Public/Granted literature
- US20080138659A1 Magnetic domain data storage devices and methods of operating the same Public/Granted day:2008-06-12
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