发明授权
- 专利标题： Magnetic domain data storage devices and methods of operating the same
- 专利标题（中）： 磁畴数据存储设备及其操作方法
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申请号： US11980418申请日： 2007-10-31
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公开(公告)号： US07835167B2公开(公告)日： 2010-11-16
- 发明人: Chee-kheng Lim , In-kyeong Yoo , Sung-hoon Choa
- 申请人： Chee-kheng Lim , In-kyeong Yoo , Sung-hoon Choa
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2006-0123383 20061206
- 主分类号： G11C19/00
- IPC分类号： G11C19/00 ; G11C11/00 ; G11C11/14 ; G11C11/15
摘要：
Example embodiments may provide data storage devices using movement of a magnetic domain wall and/or a method of operating magnetic domain data storage devices. The data storage device may include a first magnetic layer for writing data having two magnetic domains magnetized in different directions, a second magnetic layer for storing data at a side of the first magnetic layer, a data recording device connected to the first magnetic layer and the second magnetic layer, and a plurality of reading heads configured to read the second magnetic layer. The data storage device may store a larger amount of data without requiring moving mechanical systems.
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