Invention Grant
- Patent Title: System and method of providing mask defect printability analysis
- Patent Title (中): 提供掩模缺陷可印刷性分析的系统和方法
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Application No.: US12480647Application Date: 2009-06-08
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Publication No.: US07835565B2Publication Date: 2010-11-16
- Inventor: Lynn Cai , Linard Karklin , Linyong Pang
- Applicant: Lynn Cai , Linard Karklin , Linyong Pang
- Applicant Address: US CA Mountain View
- Assignee: Synopsys, Inc.
- Current Assignee: Synopsys, Inc.
- Current Assignee Address: US CA Mountain View
- Agency: Bever, Hoffman & Harms, LLP
- Agent Jeanette S. Harms
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G06F17/50

Abstract:
A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.
Public/Granted literature
- US20090245621A1 System And Method Of Providing Mask Defect Printability Analysis Public/Granted day:2009-10-01
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