公开(公告)号：US20070292017A1

公开(公告)日：2007-12-20

申请号：US11770682

申请日：2007-06-28

Applicant: Lynn Cai ,  Linard Karklin ,  Linyong Pang

Inventor： Lynn Cai ,  Linard Karklin ,  Linyong Pang

IPC: G06K9/00

CPC classification number: G03F1/84 ,  G01N21/95607 ,  G03F7/70433 ,  G03F7/705 ,  Y10T428/24802

Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.

Abstract translation: 使用物理掩模和无缺陷参考图像的模拟晶片图像来生成每个缺陷的严重性评分，从而给出客户有意义的信息以准确地评估使用掩模或修复该掩模的后果。 基于与缺陷的邻近特征的关键维度的变化相关的因素的数量来计算缺陷严重性评分。 通常的过程窗口也可用于提供有关缺陷可印刷性的客观信息。 通过使用物理掩模的模拟晶片图像也可以量化与掩模质量有关的掩模的某些其它方面，例如线边缘粗糙度和接触角圆角。

公开(公告)号：US06925202B2

公开(公告)日：2005-08-02

申请号：US09814025

申请日：2001-03-20

Applicant: Linard Karklin ,  Linyong Pang ,  Lynn Cai

Inventor： Linard Karklin ,  Linyong Pang ,  Lynn Cai

IPC: G01N21/956 ,  G03F1/84 ,  G03F7/20 ,  G06K9/00

CPC classification number: G03F1/84 ,  G01N21/95607 ,  G03F7/70433 ,  G03F7/705

Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.

Abstract translation: 使用物理掩模和无缺陷参考图像的模拟晶片图像来生成每个缺陷的严重性评分，从而给出客户有意义的信息以准确地评估使用掩模或修复该掩模的后果。 基于与缺陷的邻近特征的关键维度的变化相关的因素的数量来计算缺陷严重性评分。 通常的过程窗口也可用于提供有关缺陷可印刷性的客观信息。 通过使用物理掩模的模拟晶片图像也可以量化与掩模质量有关的掩模的某些其它方面，例如线边缘粗糙度和接触角圆角。

公开(公告)号：US06873720B2

公开(公告)日：2005-03-29

申请号：US09814023

申请日：2001-03-20

Applicant: Lynn Cai ,  Linard Karklin ,  Linyong Pang

Inventor： Lynn Cai ,  Linard Karklin ,  Linyong Pang

IPC: G01N21/956 ,  G03F1/84 ,  G03F7/20 ,  G06K9/00

CPC classification number: G03F1/84 ,  G01N21/95607 ,  G03F7/70433 ,  G03F7/705 ,  Y10T428/24802

Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.

Abstract translation: 使用物理掩模和无缺陷参考图像的模拟晶片图像来生成每个缺陷的严重性评分，从而给出客户有意义的信息以准确地评估使用掩模或修复该掩模的后果。 基于与缺陷的邻近特征的关键维度的变化相关的因素的数量来计算缺陷严重性评分。 通常的过程窗口也可用于提供有关缺陷可印刷性的客观信息。 通过使用物理掩模的模拟晶片图像也可以量化与掩模质量有关的掩模的某些其它方面，例如线边缘粗糙度和接触角圆角。

公开(公告)号：US20080260235A1

公开(公告)日：2008-10-23

申请号：US12139315

申请日：2008-06-13

Applicant: Lynn Cai ,  Linard Karklin ,  Linyong Pang

Inventor： Lynn Cai ,  Linard Karklin ,  Linyong Pang

IPC: G06K9/78

CPC classification number: G03F1/84 ,  G01N21/95607 ,  G03F7/70433 ,  G03F7/705 ,  Y10T428/24802

Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.

Abstract translation: 使用物理掩模和无缺陷参考图像的模拟晶片图像来生成每个缺陷的严重性评分，从而给出客户有意义的信息以准确地评估使用掩模或修复该掩模的后果。 基于与缺陷的邻近特征的关键维度的变化相关的因素的数量来计算缺陷严重性评分。 通常的过程窗口也可用于提供有关缺陷可印刷性的客观信息。 通过使用物理掩模的模拟晶片图像也可以量化与掩模质量有关的掩模的某些其它方面，例如线边缘粗糙度和接触角圆角。

公开(公告)号：US07254251B2

公开(公告)日：2007-08-07

申请号：US11043398

申请日：2005-01-25

Applicant: Lynn Cai ,  Linard Karklin ,  Linyong Pang

Inventor： Lynn Cai ,  Linard Karklin ,  Linyong Pang

IPC: G06K9/00

CPC classification number: G03F1/84 ,  G01N21/95607 ,  G03F7/70433 ,  G03F7/705 ,  Y10T428/24802

Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.

Abstract translation: 使用物理掩模和无缺陷参考图像的模拟晶片图像来生成每个缺陷的严重性评分，从而给出客户有意义的信息以准确地评估使用掩模或修复该掩模的后果。 基于与缺陷的邻近特征的关键维度的变化相关的因素的数量来计算缺陷严重性评分。 通常的过程窗口也可用于提供有关缺陷可印刷性的客观信息。 通过使用物理掩模的模拟晶片图像也可以量化与掩模质量有关的掩模的某些其它方面，例如线边缘粗糙度和接触角圆角。

公开(公告)号：US20090245621A1

公开(公告)日：2009-10-01

申请号：US12480647

申请日：2009-06-08

Applicant: Lynn Cai ,  Linard Karklin ,  Linyong Pang

Inventor： Lynn Cai ,  Linard Karklin ,  Linyong Pang

IPC: G06K9/00

CPC classification number: G03F1/84 ,  G01N21/95607 ,  G03F7/70433 ,  G03F7/705 ,  Y10T428/24802

Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.

Abstract translation: 使用物理掩模和无缺陷参考图像的模拟晶片图像来生成每个缺陷的严重性评分，从而给出客户有意义的信息以准确地评估使用掩模或修复该掩模的后果。 基于与缺陷的邻近特征的关键维度的变化相关的因素的数量来计算缺陷严重性评分。 通常的过程窗口也可用于提供有关缺陷可印刷性的客观信息。 通过使用物理掩模的模拟晶片图像也可以量化与掩模质量有关的掩模的某些其它方面，例如线边缘粗糙度和接触角圆角。

公开(公告)号：US07403649B2

公开(公告)日：2008-07-22

申请号：US11770682

申请日：2007-06-28

Applicant: Lynn Cai ,  Linard Karklin ,  Linyong Pang

Inventor： Lynn Cai ,  Linard Karklin ,  Linyong Pang

IPC: G06K9/00

CPC classification number: G03F1/84 ,  G01N21/95607 ,  G03F7/70433 ,  G03F7/705 ,  Y10T428/24802

Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.

Abstract translation: 使用物理掩模和无缺陷参考图像的模拟晶片图像来生成每个缺陷的严重性评分，从而给出客户有意义的信息以准确地评估使用掩模或修复该掩模的后果。 基于与缺陷的邻近特征的关键维度的变化相关的因素的数量来计算缺陷严重性评分。 通常的过程窗口也可用于提供有关缺陷可印刷性的客观信息。 通过使用物理掩模的模拟晶片图像也可以量化与掩模质量有关的掩模的某些其它方面，例如线边缘粗糙度和接触角圆角。

公开(公告)号：US20050190957A1

公开(公告)日：2005-09-01

申请号：US11043398

申请日：2005-01-25

Applicant: Lynn Cai ,  Linard Karklin ,  Linyong Pang

Inventor： Lynn Cai ,  Linard Karklin ,  Linyong Pang

IPC: G01N21/956 ,  G03F1/84 ,  G03F7/20 ,  G06K9/00

CPC classification number: G03F1/84 ,  G01N21/95607 ,  G03F7/70433 ,  G03F7/705 ,  Y10T428/24802

Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.

公开(公告)号：US06578188B1

公开(公告)日：2003-06-10

申请号：US09544798

申请日：2000-04-07

Applicant: Linyong Pang ,  Daniel William Howard ,  Linard Karklin

Inventor： Linyong Pang ,  Daniel William Howard ,  Linard Karklin

IPC: G06F1750

CPC classification number: G03F1/84 ,  G03F1/26 ,  G03F1/36 ,  G03F7/70441 ,  G03F7/705 ,  G06F17/5068 ,  G06T7/0004 ,  G06T2207/30148 ,  Y10S977/839 ,  Y10S977/887 ,  Y10S977/953

Abstract: A mask defect printability simulation server provides simulations, one-dimensional analysis, and reports to multiple clients over a wide area network, such as the Internet. This network-based simulation server allows a client to leverage a core of highly-trained engineers. Additionally, the network-based simulation server can be easily supported since only a single source for the tools associated with the simulation server is necessary for multiple clients. A client can access the simulation server using a standard personal computer having a browser, thereby eliminating the need for client to maintain an expensive database for the server. Finally, in the network-based simulation server, multiple users can view the same mask defect image and provide real-time comments to each other as simulation and analysis are performed on the defect image, thereby encouraging problem solving and decision-making dialogue among the users.

Abstract translation: 掩模缺陷可打印性模拟服务器通过广域网（如Internet）向多个客户端提供模拟，一维分析和报告。 这种基于网络的仿真服务器允许客户利用受过高等教育的工程师的核心。 另外，可以容易地支持基于网络的仿真服务器，因为与模拟服务器相关联的工具的单个源对于多个客户端是必要的。 客户端可以使用具有浏览器的标准个人计算机访问模拟服务器，从而无需客户端为服务器维护昂贵的数据库。 最后，在基于网络的仿真服务器中，多个用户可以查看相同的掩模缺陷图像并提供实时注释，因为对缺陷图像进行仿真和分析，从而鼓励解决问题和决策对话 用户

公开(公告)号：US07835565B2

公开(公告)日：2010-11-16

申请号：US12480647

申请日：2009-06-08

Applicant: Lynn Cai ,  Linard Karklin ,  Linyong Pang

Inventor： Lynn Cai ,  Linard Karklin ,  Linyong Pang

IPC: G06K9/00 ,  G06F17/50

CPC classification number: G03F1/84 ,  G01N21/95607 ,  G03F7/70433 ,  G03F7/705 ,  Y10T428/24802

Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.

Abstract translation: 使用物理掩模和无缺陷参考图像的模拟晶片图像来生成每个缺陷的严重性评分，从而给出客户有意义的信息以准确地评估使用掩模或修复该掩模的后果。 基于与缺陷的邻近特征的关键维度的变化相关的因素的数量来计算缺陷严重性评分。 通常的过程窗口也可用于提供有关缺陷可印刷性的客观信息。 通过使用物理掩模的模拟晶片图像也可以量化与掩模质量有关的掩模的某些其它方面，例如线边缘粗糙度和接触角圆角。