Invention Grant
- Patent Title: Thin film capacitor, high-density packaging substrate incorporating thin film capacitor, and method for manufacturing thin-film capacitor
- Patent Title (中): 薄膜电容器，包含薄膜电容器的高密度封装基板以及制造薄膜电容器的方法
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Application No.: US11647344Application Date: 2006-12-29
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Publication No.: US07836567B2Publication Date: 2010-11-23
- Inventor: Tetsuya Osaka , Ichiro Koiwa , Akira Hashimoto , Yoshimi Sato
- Applicant: Tetsuya Osaka , Ichiro Koiwa , Akira Hashimoto , Yoshimi Sato
- Applicant Address: JP Tokyo JP Tokyo JP Kanagawa
- Assignee: Waseda University,Oki Semiconductor Co., Ltd.,Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee: Waseda University,Oki Semiconductor Co., Ltd.,Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee Address: JP Tokyo JP Tokyo JP Kanagawa
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2003-373495 20031031; JP2004-052400 20040226
- Main IPC: H00G7/00
- IPC: H00G7/00
Abstract:
A capacitor capable of being incorporated into a packaging substrate, which capacitor includes a high-dielectric-constant layer, and an upper electrode layer and a lower electrode layer sandwiching the high-dielectric-constant layer from the upper side and the lower side. A packaging substrate containing the capacitor, and a method for producing the same are also provided.
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