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    Hybrid memory device and method for manufacturing the same
    1.
    发明申请
    Hybrid memory device and method for manufacturing the same 失效
    混合存储装置及其制造方法

    公开(公告)号：US20060065917A1

    公开(公告)日：2006-03-30

    申请号：US11228188

    申请日：2005-09-19

    申请人： Yoko Kajita ,  Ichiro Koiwa ,  Takao Kanehara ,  Kinya Ashikaga ,  Kazuhide Abe

    发明人： Yoko Kajita ,  Ichiro Koiwa ,  Takao Kanehara ,  Kinya Ashikaga ,  Kazuhide Abe

    IPC分类号： H01L29/94

    CPC分类号： H01L27/11502 ,  H01L21/76834 ,  H01L21/76838 ,  H01L27/11507

    摘要： A hybrid memory device includes a plurality of regions including a memory cell array region upon which are formed a plurality of memory cells and a logic circuit region upon which is formed a logic circuit device, and is provided with a liner oxide layer formed on a region covering the logic circuit region except the memory cell array region and a cover layer formed on the liner oxide layer while extending to the memory cell array region.

    摘要翻译： 一种混合存储器件包括多个区域，包括形成有多个存储单元的存储单元阵列区域和形成逻辑电路器件的逻辑电路区域，并且在其上形成有衬底氧化物层 覆盖除了存储单元阵列区域之外的逻辑电路区域和形成在衬垫氧化物层上的覆盖层，同时延伸到存储单元阵列区域。

    Thin-film capacitor including an opening therein and a manufacturing method thereof
    6.
    发明申请
    Thin-film capacitor including an opening therein and a manufacturing method thereof 有权
    包括开口的薄膜电容器及其制造方法

    公开(公告)号：US20060046377A1

    公开(公告)日：2006-03-02

    申请号：US11181781

    申请日：2005-07-15

    申请人： Ichiro Koiwa ,  Kinya Ashikaga

    发明人： Ichiro Koiwa ,  Kinya Ashikaga

    IPC分类号： H01L21/8244

    CPC分类号： H01L27/016 ,  H01L23/5223 ,  H01L28/40 ,  H01L28/65 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A thin-film capacitor includes a lower electrode film, a high dielectric film and an upper electrode film disposed sequentially. One film of the three films includes first and second edge portions placed opposite to each other. Furthermore, the one film includes a first opening which extends from the first edge portion toward the second edge portion and a second opening which extends from the second edge portion toward the first edge portion. Also, the first and second openings are respectively terminated away from the second and first edge portions. Alternatively, one film of the three films includes a plurality of edge portions which configure an outline of the one film. Furthermore, the one film includes a plurality of openings which respectively extend therethrough and which are terminated away from all the edge portions. Also, there is provided a manufacturing method of the thin-film capacitor.

    摘要翻译： 薄膜电容器包括依次设置的下电极膜，高电介质膜和上电极膜。 三个膜的一个膜包括彼此相对放置的第一和第二边缘部分。 此外，一个膜包括从第一边缘部分朝向第二边缘部分延伸的第一开口和从第二边缘部分朝向第一边缘部分延伸的第二开口。 此外，第一和第二开口分别从第二和第一边缘部分终止。 或者，三个膜的一个膜包括构成一个膜的轮廓的多个边缘部分。 此外，一个膜包括分别延伸穿过其中并且远离所有边缘部分终止的多个开口。 另外，提供了薄膜电容器的制造方法。

    SENSITIZING SOLUTION FOR ELECTROLESS PLATING AND ELECTROLESS PLATING METHOD
    9.
    发明申请
    SENSITIZING SOLUTION FOR ELECTROLESS PLATING AND ELECTROLESS PLATING METHOD 审中-公开
    用于电镀镀层和电镀方法的敏感解决方案

    公开(公告)号：US20110159191A1

    公开(公告)日：2011-06-30

    申请号：US13060640

    申请日：2009-08-26

    申请人： Ichiro Koiwa ,  Akira Hashimoto ,  Masahiko Usuda

    发明人： Ichiro Koiwa ,  Akira Hashimoto ,  Masahiko Usuda

    IPC分类号： B05D3/10 ,  C23C18/28

    CPC分类号： C23C18/1889 ,  C23C18/285 ,  C23C18/31 ,  C23C18/32 ,  C23C18/44 ,  H01L21/288 ,  H05K3/181

    摘要： Provided is a sensitizing solution for electroless plating which can easily dissolve an Sn compound therein without the use of acid, and thus can be used for a long period of time without impairing the uniformity of a metal plating coating. The sensitizing solution for electroless plating is a sensitizing solution for electroless plating including: an Sn compound; and a solvent, wherein the solvent contains 10 vol. % or more of a water-soluble alcohol. In addition, provided is an electroless plating method including: a pretreatment process of immersing a body to be plated into a pretreatment solution; and a plating process of immersing the body to be plated after being subjected to the pretreatment process into a plating solution, wherein the sensitizing solution for electroless plating according to the invention is used as the pretreatment solution.

    摘要翻译： 本发明提供一种化学镀的敏化溶液，其可以在不使用酸的情况下容易地溶解Sn化合物，因此可以长期使用而不损害金属镀覆层的均匀性。 化学镀的敏化溶液是用于化学镀的敏化溶液，包括：Sn化合物; 和溶剂，其中溶剂含有10体积％ ％以上的水溶性醇。 另外，提供了一种化学镀方法，其包括：将要镀覆的物体浸入预处理溶液中的预处理工艺; 以及将经过预处理后的被镀物体浸渍到电镀液中的电镀工序，其中使用本发明的无电镀用增感溶液作为预处理液。

    Thin-film capacitor including an opening therein
    10.
    发明授权
    Thin-film capacitor including an opening therein 有权
    其中包括开口的薄膜电容器

    公开(公告)号：US07436647B2

    公开(公告)日：2008-10-14

    申请号：US11181781

    申请日：2005-07-15

    申请人： Ichiro Koiwa ,  Kinya Ashikaga

    发明人： Ichiro Koiwa ,  Kinya Ashikaga

    IPC分类号： H01G4/005 ,  H01G4/06

    CPC分类号： H01L27/016 ,  H01L23/5223 ,  H01L28/40 ,  H01L28/65 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A thin-film capacitor includes a lower electrode film, a high dielectric film and an upper electrode film disposed sequentially. One film of the three films includes first and second edge portions placed opposite to each other. Furthermore, the one film includes a first opening which extends from the first edge portion toward the second edge portion and a second opening which extends from the second edge portion toward the first edge portion. Also, the first and second openings are respectively terminated away from the second and first edge portions. Alternatively, one film of the three films includes a plurality of edge portions which configure an outline of the one film. Furthermore, the one film includes a plurality of openings which respectively extend therethrough and which are terminated away from all the edge portions. Also, there is provided a manufacturing method of the thin-film capacitor.

    摘要翻译： 薄膜电容器包括依次设置的下电极膜，高电介质膜和上电极膜。 三个膜的一个膜包括彼此相对放置的第一和第二边缘部分。 此外，一个膜包括从第一边缘部分朝向第二边缘部分延伸的第一开口和从第二边缘部分朝向第一边缘部分延伸的第二开口。 此外，第一和第二开口分别从第二和第一边缘部分终止。 或者，三个膜的一个膜包括构成一个膜的轮廓的多个边缘部分。 此外，一个膜包括分别延伸穿过其中并且远离所有边缘部分终止的多个开口。 另外，提供了薄膜电容器的制造方法。