- 专利标题: Single-chip common-drain JFET device and its applications
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申请号: US12385719申请日: 2009-04-17
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公开(公告)号: US07838901B2公开(公告)日: 2010-11-23
- 发明人: Liang-Pin Tai , Jing-Meng Liu , Hung-Der Su
- 申请人: Liang-Pin Tai , Jing-Meng Liu , Hung-Der Su
- 申请人地址: TW Hsinchu
- 专利权人: Richtek Technology Corp.
- 当前专利权人: Richtek Technology Corp.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Rosenberg, Klein & Lee
- 优先权: TW93118436A 20040625
- 主分类号: H01L29/74
- IPC分类号: H01L29/74 ; H01L31/111
摘要:
A single-chip common-drain JFET device comprises a drain, two gates and two source arranged such that two common-drain JFETs are formed therewith. Due to the two JFETs merged within a single chip, no wire bonding connection is needed therebetween, thereby without parasitic inductance and resistance caused by bonding wire, and therefore improving the performance and reducing the package cost. The single-chip common-drain JFET device may be applied in buck converter, boost converter, inverting converter, switch, and two-step DC-to-DC converter to improve their performance and efficiency. Alternative single-chip common-drain JFET devices are also provided for current sense or proportional current generation.
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