发明授权
- 专利标题： Magnetic memory device and method for reading magnetic memory cell using spin hall effect
- 专利标题（中）： 磁记忆装置及使用旋转厅效应读磁记忆体的方法
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申请号： US12360964申请日： 2009-01-28
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公开(公告)号： US07839675B2公开(公告)日： 2010-11-23
- 发明人: Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim
- 申请人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim
- 申请人地址： KR Seoul
- 专利权人： Korea Institute of Science and Technology
- 当前专利权人： Korea Institute of Science and Technology
- 当前专利权人地址： KR Seoul
- 代理机构： Renner, Otto, Boisselle & Sklar, LLP
- 优先权： KR10-2008-0075690 20080801
- 主分类号： G11C11/18
- IPC分类号： G11C11/18 ; G11C11/00 ; G11C11/14
摘要：
A magnetic memory device includes a substrate for reading and a magnetic memory cell. The substrate has a channel layer. The magnetic memory cell is formed on the substrate and has a magnetized magnetic material that transfers spin data to electrons passing the channel layer. Data stored in the magnetic memory cell are read by a voltage across both side ends of the channel layer that is generated when the electrons passing the channel layer deviate in the widthwise direction of the channel layer by a spin Hall effect.
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