发明授权
- 专利标题: Semiconductor device with reduced standby failures
- 专利标题(中): 具有减少待机故障的半导体器件
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申请号: US12235812申请日: 2008-09-23
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公开(公告)号: US07839717B2公开(公告)日: 2010-11-23
- 发明人: Jin-wook Lee , Jin-yub Lee
- 申请人: Jin-wook Lee , Jin-yub Lee
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2007-0130981 20071214
- 主分类号: G11C8/18
- IPC分类号: G11C8/18
摘要:
A semiconductor memory device includes a cell core storing data, a plurality of peripheral circuit components, collectively driving data to/from the cell core and providing a default state at an output signal state during an initialization process upon power-up, and an initialization circuit detecting a standby mode of operation for the semiconductor memory device, and upon detecting the standby mode controlling operation of the plurality of peripheral circuit components to provide the default state as the signal state during standby mode.
公开/授权文献
- US20090154281A1 SEMICONDUCTOR DEVICE WITH REDUCED STANDBY FAILURES 公开/授权日:2009-06-18
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