发明授权
US07842613B1 Methods of forming microelectronic packaging substrates having through-substrate vias therein
有权
形成其中具有贯通基板通孔的微电子封装基板的方法
- 专利标题： Methods of forming microelectronic packaging substrates having through-substrate vias therein
- 专利标题（中）： 形成其中具有贯通基板通孔的微电子封装基板的方法
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申请号： US12349677申请日： 2009-01-07
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公开(公告)号： US07842613B1公开(公告)日： 2010-11-30
- 发明人: Kuolung Lei
- 申请人： Kuolung Lei
- 申请人地址： US CA San Jose
- 专利权人： Integrated Device Technology, Inc.
- 当前专利权人： Integrated Device Technology, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Myers, Bigel, et al.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
Methods of forming a substrate for microelectronic packaging may include electroplating a metal seed layer onto a sidewall of a trench extending through the substrate. The sidewall may be patterned to have at least one slot therein that extends through the substrate. This slot is formed to be sufficiently narrow to block plating of the metal seed layer onto sidewalls of the slot. Thereafter, the at least a pair of electrodes are selectively electroplated onto side-by-side portions of the metal seed layer on the sidewall of the trench. During this electroplating step, the slot is used to provide a self-aligned separation between the pair of electrodes.
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