发明授权
- 专利标题: Carbon nanotube transistors on a silicon or SOI substrate
- 专利标题(中): 硅或SOI衬底上的碳纳米管晶体管
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申请号: US12700479申请日: 2010-02-04
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公开(公告)号: US07842955B2公开(公告)日: 2010-11-30
- 发明人: Ashesh Parikh , Andrew Marshall
- 申请人: Ashesh Parikh , Andrew Marshall
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 代理商 Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号: H01L29/15
- IPC分类号: H01L29/15 ; H01L29/76 ; H01L29/94
摘要:
A method of forming a single wall thickness (SWT) carbon nanotube (CNT) transistor with a controlled diameter and chirality is disclosed. A photolithographically defined single crystal silicon seed layer is converted to a single crystal silicon carbide seed layer. A single layer of graphene is formed on the top surface of the silicon carbide. The SWT CNT transistor body is grown from the graphene layer in the presence of carbon containing gases and metal catalyst atoms. Silicided source and drain regions at each end of the silicon carbide seed layer provide catalyst metal atoms during formation of the CNT. The diameter of the SWT CNT is established by the width of the patterned seed layer. A conformally deposited gate dielectric layer and a transistor gate over the gate dielectric layer complete the CNT transistor. CNT transistors with multiple CNT bodies, split gates and varying diameters are also disclosed.
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