发明授权
- 专利标题: Semiconductor laser element and manufacturing method thereof
- 专利标题(中): 半导体激光元件及其制造方法
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申请号: US10592943申请日: 2005-03-16
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公开(公告)号: US07843983B2公开(公告)日: 2010-11-30
- 发明人: Hitoshi Saomoto , Manabu Iwamoto
- 申请人: Hitoshi Saomoto , Manabu Iwamoto
- 申请人地址: JP Moriguchi-shi JP Tottori
- 专利权人: Sanyo Electric Co., Ltd.,Tottori Sanyo Electric Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.,Tottori Sanyo Electric Co., Ltd.
- 当前专利权人地址: JP Moriguchi-shi JP Tottori
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP
- 优先权: JP2004-077689 20040318; JP2004-079543 20040319; JP2004-079544 20040319
- 国际申请: PCT/JP2005/004699 WO 20050316
- 国际公布: WO2005/091454 WO 20050929
- 主分类号: H01S5/02
- IPC分类号: H01S5/02 ; H01S5/22 ; H01S5/24 ; H01S5/40
摘要:
In an element wherein a plurality of ridges (16, 36) are arranged in parallel, supports (17, 37) are formed to sandwich each of the ridges (16, 36). More specifically, on an outer side of the ridge (16) in the element, the first support (17a) is formed, and on an inner side in the element, the second support (17b) is formed. On an outer side of the ridge (36) in the element, the first support (37a) is formed, and on an inner side in the element, the second support (37b) is formed. Thus, even when a resist is applied on an element surface and spin-coating is performed at the time of manufacturing the element, the resist on the inner side than the ridges (16, 36) in the element can be prevented from flowing into a groove between the ridges to a certain extent by means of the second supports (17b, 37b), and a resist film thickness on the inner sides of the ridges (16, 36) in the element can be prevented from being considerably small compared with that on the outer sides in the element.
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