发明授权
- 专利标题: Direct wafer bonded 2-D CUMT array
- 专利标题(中): 直接晶圆接合2-D CUMT阵列
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申请号: US12288575申请日: 2008-10-20
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公开(公告)号: US07846102B2公开(公告)日: 2010-12-07
- 发明人: Mario Kupnik , Butrus T. Khuri-Yakub
- 申请人: Mario Kupnik , Butrus T. Khuri-Yakub
- 申请人地址: US CA Palo Alto
- 专利权人: The Board of Trustees of the Leland Stanford Junior University
- 当前专利权人: The Board of Trustees of the Leland Stanford Junior University
- 当前专利权人地址: US CA Palo Alto
- 代理机构: Lumen Patent Firm
- 主分类号: A61B8/14
- IPC分类号: A61B8/14 ; H02N1/00
摘要:
A capacitive micromachined ultrasonic transducer (CMUT) array connected to a separate electronic unit is provided. The CMUT array includes at least two active elements, a ground element at the array end, and a non-active element having isolation trenches disposed between the active and ground elements. The active element includes a doped first silicon layer, a doped second silicon layer, and a first insulating layer disposed there between. A cavity is in the first silicon layer having a cross section that includes vertical portions disposed at each end of a horizontal portion, and the vertical portion spans from the first insulating layer through the first silicon layer such that a portion of the first silicon layer is isolated by the first insulating layer and the cavity. A membrane layer on the first silicon layer spans the cavity. A bottom electrode is disposed on the bottom of the second silicon layer.
公开/授权文献
- US20090122651A1 Direct wafer bonded 2-D CUMT array 公开/授权日:2009-05-14
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