发明授权
- 专利标题： Silicon wafer for IGBT and method for producing same
- 专利标题（中）： IGBT硅晶片及其制造方法
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申请号： US11877806申请日： 2007-10-24
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公开(公告)号： US07846252B2公开(公告)日： 2010-12-07
- 发明人: Shigeru Umeno , Yasuhiro Oura , Koji Kato
- 申请人： Shigeru Umeno , Yasuhiro Oura , Koji Kato
- 申请人地址： JP Tokyo
- 专利权人： Sumco Corporation
- 当前专利权人： Sumco Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Kolisch Hartwell, PC
- 优先权： JP2005-169929 20050609
- 主分类号： C30B15/00
- IPC分类号： C30B15/00 ; C30B21/06 ; C30B21/04
摘要：
A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot; slicing a wafer from the ingot; performing annealing of the wafer in an oxidizing atmosphere containing at least oxygen at a temperature satisfying a predetermined formula; and forming a polysilicon layer or a strained layer on one side of the wafer.
公开/授权文献
- US20080102287A1 SILICON WAFER FOR IGBT AND METHOD FOR PRODUCING SAME 公开/授权日：2008-05-01
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