公开(公告)号：US20070000427A1

公开(公告)日：2007-01-04

申请号：US11449498

申请日：2006-06-07

申请人： Shigeru Umeno ,  Yasuhiro Oura ,  Koji Kato

发明人： Shigeru Umeno ,  Yasuhiro Oura ,  Koji Kato

IPC分类号： C30B15/14

CPC分类号： H01L29/32 ,  H01L21/3221 ,  H01L21/3225 ,  Y10T428/31663

摘要： A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot; slicing a wafer from the ingot; performing annealing of the wafer in an oxidizing atmosphere containing at least oxygen at a temperature satisfying a predetermined formula; and forming a polysilicon layer or a strained layer on one side of the wafer.

摘要翻译： 用Czochralski法通过形成具有不大于7.0×10 17原子/ cm 3的间隙氧浓度∞的晶锭来制造用于IGBT的硅晶片; 通过中子束照射锭来在锭中掺杂磷; 从锭切片晶片; 在满足预定公式的温度下，在至少含有氧的氧化气氛中进行晶片退火; 以及在晶片的一侧上形成多晶硅层或应变层。

公开(公告)号：US07344689B2

公开(公告)日：2008-03-18

申请号：US11449498

申请日：2006-06-07

申请人： Shigeru Umeno ,  Yasuhiro Oura ,  Koji Kato

发明人： Shigeru Umeno ,  Yasuhiro Oura ,  Koji Kato

IPC分类号： C01B33/26 ,  C30B15/20

CPC分类号： H01L29/32 ,  H01L21/3221 ,  H01L21/3225 ,  Y10T428/31663

摘要： A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot; slicing a wafer from the ingot; performing annealing of the wafer in an oxidizing atmosphere containing at least oxygen at a temperature satisfying a predetermined formula; and forming a polysilicon layer or a strained layer on one side of the wafer.

摘要翻译： 用Czochralski法通过形成具有不大于7.0×10 17原子/ cm 3的间隙氧浓度∞的晶锭来制造用于IGBT的硅晶片; 通过中子束照射锭来在锭中掺杂磷; 从锭切片晶片; 在满足预定公式的温度下，在至少含有氧的氧化气氛中进行晶片退火; 以及在晶片的一侧上形成多晶硅层或应变层。

公开(公告)号：US20080102287A1

公开(公告)日：2008-05-01

申请号：US11877806

申请日：2007-10-24

申请人： Shigeru Umeno ,  Yasuhiro Oura ,  Koji Kato

发明人： Shigeru Umeno ,  Yasuhiro Oura ,  Koji Kato

IPC分类号： C30B15/14

CPC分类号： H01L29/32 ,  H01L21/3221 ,  H01L21/3225 ,  Y10T428/31663

摘要： A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot; slicing a wafer from the ingot; performing annealing of the wafer in an oxidizing atmosphere containing at least oxygen at a temperature satisfying a predetermined formula; and forming a polysilicon layer or a strained layer on one side of the wafer.

摘要翻译： 用Czochralski法通过形成具有不大于7.0×10 17原子/ cm 3的间隙氧浓度∞的晶锭来制造用于IGBT的硅晶片; 通过中子束照射锭来在锭中掺杂磷; 从锭切片晶片; 在满足预定公式的温度下，在至少含有氧的氧化气氛中进行晶片退火; 以及在晶片的一侧上形成多晶硅层或应变层。

公开(公告)号：US07846252B2

公开(公告)日：2010-12-07

申请号：US11877806

申请日：2007-10-24

申请人： Shigeru Umeno ,  Yasuhiro Oura ,  Koji Kato

发明人： Shigeru Umeno ,  Yasuhiro Oura ,  Koji Kato

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B21/04

CPC分类号： H01L29/32 ,  H01L21/3221 ,  H01L21/3225 ,  Y10T428/31663

摘要： A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot; slicing a wafer from the ingot; performing annealing of the wafer in an oxidizing atmosphere containing at least oxygen at a temperature satisfying a predetermined formula; and forming a polysilicon layer or a strained layer on one side of the wafer.

摘要翻译： 通过使用Czochralski法形成具有不大于7.0×10 17原子/ cm 3的间隙氧浓度an的晶锭，制造IGBT的硅晶片; 通过中子束照射锭来在锭中掺杂磷; 从锭切片晶片; 在满足预定公式的温度下，在至少含有氧的氧化气氛中进行晶片退火; 以及在晶片的一侧上形成多晶硅层或应变层。

公开(公告)号：US20070193501A1

公开(公告)日：2007-08-23

申请号：US11708771

申请日：2007-02-20

申请人： Toshiaki Ono ,  Shigeru Umeno ,  Wataru Sugimura ,  Masataka Hourai

发明人： Toshiaki Ono ,  Shigeru Umeno ,  Wataru Sugimura ,  Masataka Hourai

IPC分类号： C30B15/00

CPC分类号： C30B15/00 ,  C30B29/06 ,  H01L21/261

摘要： In this silicon single crystal wafer for IGBT, COP defects and dislocation clusters are eliminated from the entire region in the radial direction of the crystal, the interstitial oxygen concentration is 8.5×1017 atoms/cm3 or less, and variation in resistivity within the wafer surface is 5% or less. This method for manufacturing a silicon single crystal wafer for IGBT includes introducing a hydrogen atom-containing substance into an atmospheric gas at a hydrogen gas equivalent partial pressure of 40 to 400 Pa, and growing a single crystal having an interstitial oxygen concentration of 8.5×1017 atoms/cm3 or less at a silicon single crystal pulling speed enabling pulling of a silicon single crystal free of grown-in defects. The pulled silicon single crystal is irradiated with neutrons so as to dope with phosphorous; or an n-type dopant is added to the silicon melt; or phosphorous is added to the silicon melt so that the phosphorous concentration in the silicon single crystal is 2.9×1013 to 2.9×1015 atoms/cm3 and a p-type dopant having a segregation coefficient smaller than that of the phosphorous is added to the silicon melt so that the concentration in the silicon single crystals is 1×1013 to 1×1015 atoms/cm3 corresponding to the segregation coefficient thereof.

摘要翻译： 在这种用于IGBT的硅单晶晶片中，从晶体的径向的整个区域去除了COP缺陷和位错簇，间隙氧浓度为8.5×10 17原子/ cm 3 以下，晶片表面的电阻率变化为5％以下。 制造用于IGBT的硅单晶晶片的方法包括：将含氢原子的物质以40-400Pa的氢气当量分压引入气氛气体中，并生长间隙氧浓度为8.5×10 5的单晶， 低于17原子/ cm 3以下的硅单晶拉伸速度，使得能够拉伸没有生长缺陷的硅单晶。 将拉制的硅单晶用中子照射以掺入磷; 或者将n型掺杂剂添加到硅熔体中; 或将磷添加到硅熔体中，使得硅单晶中的磷浓度为2.9×10 13 -2.9×10 15原子/ cm 3 / 并且将具有小于磷的偏析系数的p型掺杂剂添加到硅熔体中，使得硅单晶中的浓度为1×10 13至1×10 15 / 对应于其偏析系数的SUP>原子/ cm 3。

公开(公告)号：US08771415B2

公开(公告)日：2014-07-08

申请号：US12604627

申请日：2009-10-23

申请人： Shigeru Umeno ,  Keiichiro Hiraki ,  Hiroaki Taguchi

发明人： Shigeru Umeno ,  Keiichiro Hiraki ,  Hiroaki Taguchi

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04 ,  C01B33/02

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/20 ,  C30B33/12

摘要： By determining a control direction of a pulling-up velocity without using a position or a width of an OSF region as an index, a subsequent pulling-up velocity profile is fed back and adjusted. A silicon single crystal ingot that does not include a COP and a dislocation cluster is grown by a CZ method, a silicon wafer is sliced from the silicon single crystal ingot, reactive ion etching is performed on the silicon wafer in an as-grown state, and a grown-in defect including silicon oxide is exposed as a protrusion on an etching surface. A growing condition in subsequent growing is fed back and adjusted on the basis of an exposed protrusion generation region. As a result, feedback with respect to a nearest batch can be performed without performing heat treatment to expose a defect.

摘要翻译： 通过在不使用OSF区域的位置或宽度作为指标的情况下确定提升速度的控制方向，反馈并调整随后的上拉速度分布。 通过CZ法生长不含有COP和位错簇的硅单晶锭，从硅单晶锭切片硅晶片，以生长状态对硅晶片进行反应离子蚀刻， 并且包括氧化硅的生长缺陷作为突起暴露在蚀刻表面上。 随后生长中的生长状况基于暴露的突起产生区域被反馈并调整。 因此，可以在不执行热处理以暴露缺陷的情况下执行关于最近批次的反馈。

公开(公告)号：US20100290971A1

公开(公告)日：2010-11-18

申请号：US12779968

申请日：2010-05-14

申请人： Wataru Itou ,  Takashi Nakayama ,  Shigeru Umeno ,  Hiroaki Taguchi ,  Yasuo Koike

发明人： Wataru Itou ,  Takashi Nakayama ,  Shigeru Umeno ,  Hiroaki Taguchi ,  Yasuo Koike

IPC分类号： H01L21/322 ,  C01B33/021

CPC分类号： H01L21/3225 ,  C30B15/00 ,  C30B29/06 ,  C30B33/005

摘要： It is possible to provide a silicon wafer that as well as being free of COPs and dislocation clusters, has defects (grown-in defects including silicon oxides), which are not overt in an as-grown state, such as OSF nuclei and oxygen precipitate nuclei existing in the PV region, to be vanished or reduced, by adopting a method for producing a silicon wafer, the method comprising the steps of: growing a single crystal silicon ingot by the Czochralski method; cutting a silicon wafer out of the ingot; subjecting the wafer to an RTP at 1,250° C. or more for 10 seconds or more in an oxidizing atmosphere; and removing a grown-in defect region including silicon oxides in the vicinity of wafer surface layer after the RTP.

摘要翻译： 可以提供不含COP和位错簇的硅晶片，在生长状态下没有明显的缺陷（包括氧化硅的生长缺陷），例如OSF核和氧沉淀物 通过采用硅晶片的制造方法，存在于PV区域中的原子核将被消除或减少，该方法包括以下步骤：通过切克劳斯基法生长单晶硅锭; 从硅锭切出硅晶片; 在氧化气氛中将晶片经受1,250℃或更高10秒钟以上的RTP; 并且在RTP之后去除晶片表面层附近的包含氧化硅的生长缺陷区域。

公开(公告)号：US20110052923A1

公开(公告)日：2011-03-03

申请号：US12862126

申请日：2010-08-24

申请人： Shigeru Umeno ,  Toshiaki Ono ,  Wataru Sugimura

发明人： Shigeru Umeno ,  Toshiaki Ono ,  Wataru Sugimura

IPC分类号： H01B1/04 ,  C30B15/00 ,  B32B9/00

CPC分类号： C30B15/00 ,  C30B25/186 ,  C30B25/20 ,  C30B29/06 ,  H01L21/3225

摘要： An epitaxial wafer is produced by a method comprising steps of growing a silicon single crystal ingot having a given oxygen concentration through Czochralski method, cutting out a wafer from the silicon single crystal ingot, subjecting the wafer to a heat treatment at a given temperature for a given time, and epitaxially growing the wafer.

摘要翻译： 通过包括以下步骤的方法制造外延晶片，该方法包括以下步骤：通过Czochralski法生长具有给定氧浓度的硅单晶锭，从硅单晶锭切出晶片，使晶片在给定温度下进行热处理， 给定时间，并外延生长晶片。

公开(公告)号：US20090081856A1

公开(公告)日：2009-03-26

申请号：US12235448

申请日：2008-09-22

申请人： Shigeru Umeno

发明人： Shigeru Umeno

IPC分类号： H01L21/22

CPC分类号： H01L29/7395 ,  C30B15/04 ,  C30B15/305 ,  C30B29/06 ,  C30B31/20 ,  C30B33/04 ,  H01L21/3221 ,  H01L21/3225 ,  H01L29/0657 ,  H01L29/66325 ,  Y10T428/21

摘要： A single crystal silicon wafer for use in the production of insulated gate bipolar transistors is made of single crystal silicon grown by the Czochralski method and has a gate oxide with a film thickness of from 50 to 150 nm. The wafer has an interstitial oxygen concentration of at most 7.0×1017 atoms/cm3, a resistivity variation within the plane of the wafer of at most 5% and, letting tox (cm) be the gate oxide film thickness and S (cm2) be the electrode surface area when determining the TZDB pass ratio, a density d (cm−3) of crystal originated particles (COP) having a size at least twice the gate oxide film thickness which satisfies the formula d≦−ln(0.9)/(S·tox/2). The wafers have an increased production yield and a small resistivity variation.

摘要翻译： 用于制造绝缘栅双极晶体管的单晶硅晶片由采用切克劳斯基法生长的单晶硅制成，并具有膜厚度为50至150nm的栅极氧化物。 晶片具有至多7.0×10 17原子/ cm 3的间隙氧浓度，晶片平面内的电阻率变化最大为5％，并且使tox（cm）为栅极氧化膜厚度，S（cm2）为 确定TZDB通过比的电极表面积，晶体起始粒子（COP）的密度d（cm -3），其尺寸至少为栅极氧化膜厚度的两倍，满足公式d <= - ln（0.9）/（ S.tox / 2）。 晶片具有增加的产量和小的电阻率变化。

公开(公告)号：US07014704B2

公开(公告)日：2006-03-21

申请号：US10455609

申请日：2003-06-06

申请人： Toshiaki Ono ,  Tadami Tanaka ,  Shigeru Umeno ,  Eiichi Asayama ,  Hideshi Nishikawa

发明人： Toshiaki Ono ,  Tadami Tanaka ,  Shigeru Umeno ,  Eiichi Asayama ,  Hideshi Nishikawa

IPC分类号： C30B15/20

CPC分类号： C30B29/06 ,  C30B15/04 ,  C30B15/206

摘要： A method for growing a silicon single crystal used for semiconductor integrated circuit devices, wherein the single crystal is grown by the CZ method at a nitrogen concentration of 1×1013 atoms/cm3–1×1015 atoms/cm3 with a cooling rate of not less than 2.5° C./min at a crystal temperature of 1150° C.–1000° C., in which case, the pulling rate is adjusted such that the outside diameter of a circular region including oxidation-induced stacking faults generated at the center of a wafer which is subjected to the oxidation heat treatment at high temperature is not more than ⅗ of the wafer diameter, wherein the wafer is prepared by slicing the grown single crystal. In the growth method, the concentration of oxygen in the silicon single crystal is preferably not more than 9×1017 atoms/cm3 (ASTM '79). With this method, the silicon single crystal, in which the generation of Grown-in defects can be effectively suppressed, can be produced in a simple process without any increase in the production cost. Moreover, a specification of the oxygen concentration and the application of the outward diffusion treatment are capable of producing a wafer, which is optimally used for monitoring particles.

摘要翻译： 一种生长用于半导体集成电路器件的硅单晶的方法，其中通过CZ法以1×10 3原子/ cm 3的氮浓度生长单晶。 -1×10 15原子/ cm 3，冷却速率不低于2.5℃/分钟，晶体温度为1150℃-1000℃， 在这种情况下，调整拉伸速度，使得在高温下进行氧化热处理的晶片的中心处产生的氧化诱发堆垛层错的圆形区域的外径不大于 晶片直径，其中通过对生长的单晶进行切片来制备晶片。 在生长方法中，硅单晶中氧的浓度优选不超过9×10 17原子/ cm 3（ASTM '79）。 利用这种方法，可以在简单的工艺中生产出能够有效抑制生成缺陷的硅单晶，而不会增加生产成本。 此外，氧浓度的规格和向外扩散处理的应用能够生产最佳地用于监测颗粒的晶片。